Browsing by Author "Zhao, J. L."

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    An indium-free transparent resistive switching random access memory
    (IEEE, 2011-02-28) Zheng, K.; Sun, X. W.; Zhao, J. L.; Wang, Y.; Yu, H. Y.; Demir, Hilmi Volkan; Teo, K. L.
    We report an indium-free transparent resistive switching random access memory device based on GZO-Ga(2)O(3)-ZnO-Ga(2)O(3)-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.
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    Top-illuminated dye-sensitized solar cells with a room-temperature-processed ZnO photoanode on metal substrates and a Pt-coated Ga-doped ZnO counter electrode
    (IOP Publishing, 2011-01-11) Kyaw, A. K. K.; Sun, X. W.; Zhao, J. L.; Wang, J. X.; Zhao, D. W.; Wei, X. F.; Liu, X. W.; Demir, Hilmi Volkan; Wu, T.
    We report on top-illuminated, fluorine tin oxide/indium tin oxide-free (FTO/ITO-free), dye-sensitized solar cells (DSCs) using room-temperature- processed ZnO layers on metal substrates as the working electrodes and Pt-coated Ga-doped ZnO layers (GZO) as the counter electrodes. These top-illuminated DSCs with GZO render comparable efficiency to those employing commercial FTO counter electrodes. Despite a lower current density, the top-illuminated DSCs result in a higher fill factor than conventional DSCs due to a low ohmic loss at the electrode/semiconductor interface. The effect of metal substrate on the performance of the resulting top-illuminated DSCs is also studied by employing various metals with different work functions. Ti is shown to be a suitable metal to be used as the working electrode in the top-illuminated device architecture owing to its low ohmic loss at the electrode/semiconductor interface, minimum catalytic activity on redox reactions and high resistance to corrosion by liquid electrolytes.