Browsing by Author "Sisman, Z."

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    Atomic Layer Deposition for Vertically Integrated ZnO Thin Film Transistors: Toward 3D High Packing Density Thin Film Electronics
    (Wiley-VCH Verlag, 2017) Sisman, Z.; Bolat, S.; Okyay, Ali Kemal
    We report on the first demonstration of the atomic layer deposition (ALD) based three dimensional (3D) integrated ZnO thin film transistors (TFTs) on rigid substrates. Devices exhibit high on-off ratio (∼106) and high effective mobility (∼11.8 cm2 V−1 s−1). It has also been demonstrated that the steps of fabrication result in readily stable electrical characteristics in TFTs, eliminating the need for post-production steps. These results mark the potential of our fabrication method for the semiconducting metal oxide-based vertical-integrated circuits requiring high packing density and high functionality. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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    Demonstration of flexible thin film transistors with GaN channels
    (American Institute of Physics Inc., 2016) Bolat, S.; Sisman, Z.; Okyay, Ali Kemal
    We report on the thin film transistors (TFTs) with Gallium Nitride (GaN) channels directly fabricated on flexible substrates. GaN thin films are grown by hollow cathode plasma assisted atomic layer deposition (HCPA-ALD) at 200 °C. TFTs exhibit 103 on-to-off current ratios and are shown to exhibit proper transistor saturation behavior in their output characteristics. Gate bias stress tests reveal that flexible GaN TFTs have extremely stable electrical characteristics. Overall fabrication thermal budget is below 200 °C, the lowest reported for the GaN based transistors so far. © 2016 Author(s)
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    LWIR all-atomic layer deposition ZnO bilayer microbolometer for thermal imaging
    (SPIE, 2017) Poyraz, M.; Gorgulu, K.; Sisman, Z.; Tanrikulu, M. Y.; Okyay, Ali Kemal
    We propose an all-ZnO bilayer microbolometer, operating in the long-wave infrared regime that can be implemented by consecutive atomic layer deposition growth steps. Bilayer design of the bolometer provides very high absorption coefficients compared to the same thickness of a single ZnO layer. High absorptivity of the bilayer structure enables higher performance (lower noise equivalent temperature difference and time constant values) compared to single-layer structure. We observe these results computationally by conducting both optical and thermal simulations. © 2017 Society of Photo-Optical Instrumentation Engineers (SPIE).