Browsing by Author "Saraswat, K."
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Item Open Access Cubic-phase zirconia nano-island growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices(Institute of Physics Publishing Ltd., 2017) El-Atab, N.; Ulusoy, T. G.; Ghobadi, A.; Suh, J.; Islam, R.; Okyay, Ali Kemal; Saraswat, K.; Nayfeh, A.The manipulation of matter at the nanoscale enables the generation of properties in a material that would otherwise be challenging or impossible to realize in the bulk state. Here, we demonstrate growth of zirconia nano-islands using atomic layer deposition on different substrate terminations. Transmission electron microscopy and Raman measurements indicate that the nano-islands consist of nano-crystallites of the cubic-crystalline phase, which results in a higher dielectric constant (κ ∼ 35) than the amorphous phase case (κ ∼ 20). X-ray photoelectron spectroscopy measurements show that a deep quantum well is formed in the Al2O3/ZrO2/Al2O3 system, which is substantially different to that in the bulk state of zirconia and is more favorable for memory application. Finally, a memory device with a ZrO2 nano-island charge-trapping layer is fabricated, and a wide memory window of 4.5 V is obtained at a low programming voltage of 5 V due to the large dielectric constant of the islands in addition to excellent endurance and retention characteristics.Item Open Access Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon(Elsevier, 2015) Hyung Nam J.; Alkis, S.; Nam, D.; Afshinmanesh F.; Shim J.; Park, J.; Brongersma, M.; Okyay, Ali Kemal; Kamins, T.I.; Saraswat, K.A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO2 as growth mask. Lateral overgrowth of Ge crystal covers SiO2 surface and neighboring Ge crystals coalesce with each other. Therefore, single crystalline Ge sitting on insulator for GOI applications is achieved. Chemical mechanical polishing (CMP) is performed to planarize the GOI surface. Transmission electron microscopy (TEM) analysis, Raman spectroscopy, and time-resolved photoluminescence (TRPL) show high quality crystalline Ge sitting on SiO2. Optical response from metal-semiconductor-metal (MSM) photodetector shows good optical absorption at 850 nm and 1550 nm wavelength. © 2015 Elsevier B.V. All rights reserved.Item Open Access Resting heart rate estimation using PIR sensors(Elsevier B.V., 2017) Kapu, H.; Saraswat, K.; Ozturk, Y.; Çetin, A. EnisIn this paper, we describe a non-invasive and non-contact system of estimating resting heart rate (RHR) using a pyroelectric infrared (PIR) sensor. This infrared system monitors and records the chest motion of a subject using the analog output signal of the PIR sensor. The analog output signal represents the composite motion due to inhale-exhale process with magnitude much larger than the minute vibrations of heartbeat. Since the acceleration of the heart activity is much faster than breathing the second derivative of the PIR sensor signal monitoring the chest of the subject is used to estimate the resting heart rate. Experimental results indicate that this ambient sensor can measure resting heart rate with a chi-square significance level of α = 0.05 compared to an industry standard PPG sensor. This new system provides a low cost and an effective way to estimate the resting heart rate, which is an important biological marker.