Browsing by Author "Rubio, A."

Now showing 1 - 8 of 8

Open Access
Anisotropic electronic, mechanical, and optical properties of monolayer WTe2
(American Institute of Physics Inc., 2016) Torun, E.; Sahin, H.; Cahangirov, S.; Rubio, A.; Peeters, F. M.
Using first-principles calculations, we investigate the electronic, mechanical, and optical properties of monolayer WTe2. Atomic structure and ground state properties of monolayer WTe2 (Td phase) are anisotropic which are in contrast to similar monolayer crystals of transition metal dichalcogenides, such as MoS2, WS2, MoSe2, WSe2, and MoTe2, which crystallize in the H-phase. We find that the Poisson ratio and the in-plane stiffness is direction dependent due to the symmetry breaking induced by the dimerization of the W atoms along one of the lattice directions of the compound. Since the semimetallic behavior of the Td phase originates from this W-W interaction (along the a crystallographic direction), tensile strain along the dimer direction leads to a semimetal to semiconductor transition after 1% strain. By solving the Bethe-Salpeter equation on top of single shot G0W0 calculations, we predict that the absorption spectrum of Td-WTe2 monolayer is strongly direction dependent and tunable by tensile strain.
Open Access
Atomic and electronic structure of silicene on Ag: a theoretical perspective
(Springer, 2018) Cahangirov, S.; Rubio, A.
The isolation of graphene sheets from its parent crystal graphites has given the kick to experimental research on its prototypical 2D elemental cousin, silicene [1]. Unlike graphene, silicene lacks a layered parent material from which it could be derived by exfoliation. Hence, the efforts of making the silicene dream a reality were focused on epitaxial growth of silicene on substrates. The first synthesis of epitaxial silicene on silver (111) [27, 46] and zirconium diboride templates [16] and next on an iridium (111) surface [31], has boosted research on other elemental group IV graphene-like materials, namely, germanene and stanene [30, 48]. The boom is motivated by several new possibilities envisaged for future electronics, typically because of the anticipated very high mobilities for silicene and germanene [49], as well as potential optical applications [30]. It is also fuelled by their predicted robust 2D topological insulator characters [14, 28] and potential high temperature superconductor character [5, 50]. One of the most promising candidates as a substrate is Ag because from the studies of the reverse system, where Ag atoms were deposited on silicon substrate, it was known that Ag and silicon make sharp interfaces without making silicide compounds [24]. Indeed, studies on synthesiz and characterization of silicene is mainly focused on using Ag(111) as substrates and hence we think it is important to understand this particular system. In this Chapter, we present a theoretical perspective on the studies investigating the atomic and electronic structure of silicene on Ag substrates.
Open Access
Atomic structure of the √3 × √3 phase of silicene on Ag (111)
(American Physical Society, 2014-07-28) Cahangirov, S.; Özçelik, V. O.; Xian, L.; Avila, J.; Cho, S.; Asensio, M. C.; Çıracı, Salim; Rubio, A.
The growth of the 3√×3√ reconstructed silicene on Ag substrate has been frequently observed in experiments while its atomic structure and formation mechanism is poorly understood. Here, by first-principles calculations, we show that 3√×3√ reconstructed silicene is constituted by dumbbell units of Si atoms arranged in a honeycomb pattern. Our model shows excellent agreement with the experimentally reported lattice constant and STM image. We propose a new mechanism for explaining the spontaneous and consequential formation of 3√×3√ structures from 3×3 structures on Ag substrate. We show that the 3√×3√ reconstruction is mainly determined by the interaction between Si atoms and have weak influence from Ag substrate. The proposed mechanism opens the path to understanding of multilayer silicon. ©2014 American Physical Society
Open Access
Bilayer SnS2: tunable stacking sequence by charging and loading pressure
(American Physical Society, 2016-03) Bacaksiz, C.; Cahangirov, S.; Rubio, A.; Senger, R. T.; Peeters, F. M.; Sahin, H.
Employing density functional theory-based methods, we investigate monolayer and bilayer structures of hexagonal SnS2, which is a recently synthesized monolayer metal dichalcogenide. Comparison of the 1H and 1T phases of monolayer SnS2 confirms the ground state to be the 1T phase. In its bilayer structure we examine different stacking configurations of the two layers. It is found that the interlayer coupling in bilayer SnS2 is weaker than that of typical transition-metal dichalcogenides so that alternative stacking orders have similar structural parameters and they are separated with low energy barriers. A possible signature of the stacking order in the SnS2 bilayer has been sought in the calculated absorbance and reflectivity spectra. We also study the effects of the external electric field, charging, and loading pressure on the characteristic properties of bilayer SnS2. It is found that (i) the electric field increases the coupling between the layers at its preferred stacking order, so the barrier height increases, (ii) the bang gap value can be tuned by the external E field and under sufficient E field, the bilayer SnS2 can become a semimetal, (iii) the most favorable stacking order can be switched by charging, and (iv) a loading pressure exceeding 3 GPa changes the stacking order. The E-field tunable band gap and easily tunable stacking sequence of SnS2 layers make this 2D crystal structure a good candidate for field effect transistor and nanoscale lubricant applications.
Open Access
Confined linear carbon chains as a route to bulk carbyne
(Nature Publishing Group, 2016-04) Shi, L.; Rohringer, P.; Suenaga, K.; Niimi, Y.; Kotakoski, J.; Meyer, J. C.; Peterlik, H.; Wanko, M.; Cahangirov, S.; Rubio, A.; Lapin, Z. J.; Novotny, L.; Ayala, P.; Pichler, T.
Strong chemical activity and extreme instability in ambient conditions characterize carbyne, an infinite sp1 hybridized carbon chain. As a result, much less has been explored about carbyne as compared to other carbon allotropes such as fullerenes, nanotubes and graphene. Although end-capping groups can be used to stabilize carbon chains, length limitations are still a barrier for production, and even more so for application. We report a method for the bulk production of long acetylenic linear carbon chains protected by thin double-walled carbon nanotubes. The synthesis of very long arrangements is confirmed by a combination of transmission electron microscopy, X-ray diffraction and (near-field) resonance Raman spectroscopy. Our results establish a route for the bulk production of exceptionally long and stable chains composed of more than 6,000 carbon atoms, representing an elegant forerunner towards the final goal of carbyne's bulk production.
Open Access
Polyyne electronic and vibrational properties under environmental interactions
(American Physical Society, 2016) Wanko, M.; Cahangirov, S.; Shi, L.; Rohringer, P.; Lapin, Z. J.; Novotny, L.; Ayala, P.; Pichler, T.; Rubio, A.
Recently the novel system of linear carbon chains inside double-walled carbon nanotubes has extended the length of sp1 hybridized carbon chains from 44 to thousands of atoms [Shi, Nat. Mater. 15, 634 (2016)1476-112210.1038/nmat4617]. The optoelectronic properties of these ultralong chains are poorly described by current theoretical models, which are based on short chain experimental data and assume a constant environment. As such, a physical understanding of the system in terms of charge transfer and van der Waals interactions is widely missing. We provide a reference for the intrinsic Raman frequency of polyynes in vacuo and explicitly describe the interactions between polyynes and carbon nanotubes. We find that van der Waals interactions strongly shift this frequency, which has been neither expected nor described for other intramolecular C-C stretching vibrations. As a consequence of charge transfer from the tube to the chain, the Raman response of long chains is qualitatively different from the known phonon dispersion of polymers close to the Γ point. Based on these findings we show how to correctly interpret the Raman data, considering the nanotube's properties. This is essential for its use as an analytical tool to optimize the growth process for future applications.
Open Access
Silicite: the layered allotrope of silicon
(American Physical Society, 2014) Cahangirov, S.; Özçelik, V. O.; Rubio, A.; Çıracı, Salim
Based on first-principles calculations, we predict two new thermodynamically stable layered-phases of silicon, named as silicites, which exhibit strong directionality in the electronic and structural properties. As compared to silicon crystal, they have wider indirect band gaps but also increased absorption in the visible range making them more interesting for photovoltaic applications. These stable phases consist of intriguing stacking of dumbbell patterned silicene layers having trigonal structure with root 3x root 3 periodicity of silicene and have cohesive energies smaller but comparable to that of the cubic diamond silicon. Our findings also provide atomic scale mechanisms for the growth of multilayer silicene as well as silicites.
Open Access
Stable monolayer honeycomb-like structures of RuX2 (X=S,Se)
(American Physical Society, 2016-10) Ersan, F.; Cahangirov, S.; Gökoğlu, G.; Rubio, A.; Aktürk, E.
Recent studies show that several metal oxides and dichalcogenides (MX2), which exist in nature, can be stable in two-dimensional (2D) form and each year several new MX2 structures are explored. The unstable structures in H (hexagonal) or T (octahedral) forms can be stabilized through Peierls distortion. In this paper, we propose new 2D forms of RuS2 and RuSe2 materials. We investigate in detail the stability, electronic, magnetic, optical, and thermodynamic properties of 2D RuX2 (X=S,Se) structures from first principles. While their H and T structures are unstable, the distorted T structures (T′-RuX2) are stable and have a nonmagnetic semiconducting ground state. The molecular dynamic simulations also confirm that T′-RuX2 systems are stable even at 500 K without any structural deformation. T′-RuS2 and T′-RuSe2 have indirect band gaps with 0.745 eV (1.694 eV with HSE) and 0.798 eV (1.675 eV with HSE) gap values, respectively. We also examine their bilayer and trilayer forms and find direct and smaller band gaps. We find that AA stacking is more favorable than the AB configuration. The new 2D materials obtained can be good candidates with striking properties for applications in semiconductor electronic, optoelectronic devices, and sensor technology.