Browsing by Author "Rasouli, H. R."

Now showing 1 - 3 of 3

Open Access
Atomic layer deposition synthesized TiOx thin films and their application as microbolometer active materials
(AVS Science and Technology Society, 2016) Tanrikulu, M. Y.; Rasouli, H. R.; Ghaffari, M.; Topalli K.; Okyay, Ali Kemal
This paper demonstrates the possible usage of TiOx thin films synthesized by atomic layer deposition as a microbolometer active material. Thin film electrical resistance is investigated as a function of thermal annealing. It is found that the temperature coefficient of resistance values can be controlled by coating/annealing processes, and the value as high as -9%/K near room temperature is obtained. The noise properties of TiOx films are characterized. It is shown that TiOx films grown by atomic layer deposition technique could have a significant potential to be used as a new active material for microbolometer-based applications. © 2016 American Vacuum Society.
Open Access
High elasticity and strength of ultra-thin metallic transition metal dichalcogenides
(Royal Society of Chemistry, 2021-05-24) Sheraz, Ali; Mehmood, Naveed; Çiçek, M. M.; Ergün, İ.; Rasouli, H. R.; Durgun, Engin; Kasırga, Talip Serkan
Mechanical properties of transition metal dichalcogenides (TMDCs) are relevant to their prospective applications in flexible electronics. So far, the focus has been on the semiconducting TMDCs, mostly MoX2 and WX2 (X = S, Se) due to their potential in optoelectronics. A comprehensive understanding of the elastic properties of metallic TMDCs is needed to complement the semiconducting TMDCs in flexible optoelectronics. Thus, mechanical testing of metallic TMDCs is pertinent to the realization of the applications. Here, we report on the atomic force microscopy-based nano-indentation measurements on ultra-thin 2H-TaS2 crystals to elucidate the stretching and breaking of the metallic TMDCs. We explored the elastic properties of 2H-TaS2 at different thicknesses ranging from 3.5 nm to 12.6 nm and find that the Young's modulus is independent of the thickness at a value of 85.9 ± 10.6 GPa, which is lower than the semiconducting TMDCs reported so far. We determined the breaking strength as 5.07 ± 0.10 GPa which is 6% of the Young's modulus. This value is comparable to that of other TMDCs. We used ab initio calculations to provide an insight into the high elasticity measured in 2H-TaS2. We also performed measurements on a small number of 1T-TaTe2, 3R-NbS2 and 1T-NbTe2 samples and extended our ab initio calculations to these materials to gain a deeper understanding on the elastic and breaking properties of metallic TMDCs. This work illustrates that the studied metallic TMDCs are suitable candidates to be used as additives in composites as functional and structural elements and for flexible conductive electronic devices.
Open Access
Nanosecond pulsed laser ablated sub-10 nm silicon nanoparticles for improving photovoltaic conversion efficiency of commercial solar cells
(Institute of Physics Publishing Ltd., 2017) Rasouli, H. R.; Ghobadi, A.; Ghobadi, T. G. U.; Ates, H.; Topalli, K.; Okyay, Ali Kemal
In this paper, we demonstrate the enhancement of photovoltaic (PV) solar cell efficiency using luminescent silicon nanoparticles (Si-NPs). Sub-10 nm Si-NPs are synthesized via pulsed laser ablation technique. These ultra-small Si nanoparticles exhibit photoluminescence (PL) character tics at 425 and 517 nm upon excitation by ultra-violet (UV) light. Therefore, they can act as secondary light sources that convert high energetic photons to ones at visible range. This down-shifting property can be a promising approach to enhance PV performance of the solar cell, regardless of its type. As proof-of-concept, polycrystalline commercial solar cells with an efficiency of ca 10% are coated with these luminescent Si-NPs. The nanoparticle-decorated solar cells exhibit up to 1.64% increase in the external quantum efficiency with respect to the uncoated reference cells. According to spectral photo-responsivity characterizations, the efficiency enhancement is stronger in wavelengths below 550 nm. As expected, this is attributed to down-shifting via Si-NPs, which is verified by their PL characteristics. The results presented here can serve as a beacon for future performance enhanced devices in a wide range of applications based on Si-NPs including PVs and LED applications.