Browsing by Author "Park, J. H."

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    CD8 lineage-specific regulation of interleukin-7 receptor expression by the transcriptional repressor Gfi1
    (The American Society for Biochemistry and Molecular Biology, Inc., 2012) Ligons, D. L.; Tuncer, C.; Linowes, B. A.; Akcay, I. M.; Kurtulus, S.; Deniz, E.; Arslan, B. A.; Cevik, S. I.; Keller, H. R.; Luckey, M. A.; Feigenbaum, L.; Möröy, T.; Ersahin, T.; Atalay, R.; Erman, B.; Park, J. H.
    Interleukin-7 receptor α (IL-7Rα) is essential for T cell survival and differentiation. Glucocorticoids are potent enhancers of IL-7Rα expression with diverse roles in T cell biology. Here we identify the transcriptional repressor, growth factor independent-1 (Gfi1), as a novel intermediary in glucocorticoid-induced IL-7Rα up-regulation. We found Gfi1 to be a major inhibitory target of dexamethasone by microarray expression profiling of 3B4.15 T-hybridoma cells. Concordantly, retroviral transduction of Gfi1 significantly blunted IL-7Rα up-regulation by dexamethasone. To further assess the role of Gfi1 in vivo, we generated bacterial artificial chromosome (BAC) transgenic mice, in which a modified Il7r locus expresses GFP to report Il7r gene transcription. By introducing this BAC reporter transgene into either Gfi1-deficient or Gfi1-transgenic mice, we document in vivo that IL-7Rα transcription is up-regulated in the absence of Gfi1 and down-regulated when Gfi1 is overexpressed. Strikingly, the in vivo regulatory role of Gfi1 was specific for CD8+, and not CD4+ T cells or immature thymocytes. These results identify Gfi1 as a specific transcriptional repressor of the Il7r gene in CD8 T lymphocytes in vivo.
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    Disgust sensitivity relates to attitudes toward gay men and lesbian women across 31 nations
    (Sage Publications Ltd., 2021-11-26) Van Leeuwen, F.; Inbar, Y.; Petersen, M. B.; Aarøe, L.; Barclay, P.; Barlow, F. K.; de Barra, M.; Becker, D. V.; Borovoi, L.; Choi, J.; Consedine, N. S.; Conway, J. R.; Conway, P.; Adoric, V. C.; Demirci, Dilara Ekin; Fernández, A. M.; Ferreira, D. C. S.; Ishii, K.; Jakšić, I.; Ji, T.; Jonaityte, I.; Lewis, D. M. G.; Li, N. P.; McIntyre, J. C.; Mukherjee, S.; Park, J. H.; Pawlowski, B.; Pizarro, D.; Prokop, P.; Prodromitis, G.; Rantala, M. J.; Reynolds, L. M.; Sandin, B.; Sevi, Barış; Srinivasan, N.; Tewari, S.; Yong, J. C.; Žeželj, I.; Tybur, J. M.
    Previous work has reported a relation between pathogen-avoidance motivations and prejudice toward various social groups, including gay men and lesbian women. It is currently unknown whether this association is present across cultures, or specific to North America. Analyses of survey data from adult heterosexuals (N = 11,200) from 31 countries showed a small relation between pathogen disgust sensitivity (an individual-difference measure of pathogen-avoidance motivations) and measures of antigay attitudes. Analyses also showed that pathogen disgust sensitivity relates not only to antipathy toward gay men and lesbians, but also to negativity toward other groups, in particular those associated with violations of traditional sexual norms (e.g., prostitutes). These results suggest that the association between pathogen-avoidance motivations and antigay attitudes is relatively stable across cultures and is a manifestation of a more general relation between pathogen-avoidance motivations and prejudice towards groups associated with sexual norm violations.
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    High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing
    (American Institute of Physics, 2010-08-09) Yu, H. Y.; Cheng, S. L.; Park, J. H.; Okyay, Ali Kemal; Onbal, M. C.; Ercan, B.; Nishi, Y.; Saraswat, K. C.
    Germanium-on-insulator (GOI) is desired for high performance metal-oxide-semiconductor transistors and monolithically integrated optoelectronics. We demonstrate a promising approach to achieve single-crystal defect-free GOI by using lateral over-growth through SiO2 window. The dislocations due to the lattice mismatch are effectively terminated and reduced in SiO2 trench by selective area heteroepitaxy combined with hydrogen annealing. Low defect density of 4× 106 cm-2 and low surface roughness of 0.7 nm (root-mean-square) on GOI are confirmed by plan-view transmission electron microscopy and atomic force microscopy analysis. In addition, the excellent metal-semiconductor-metal diode electrical characteristics fabricated on this GOI confirm Ge crystal quality. The selectively grown GOI structure can provide the monolithic integration of SiGe based devices on a Si very large scale integration (VLSI) platform
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    Selective-area high-quality germanium growth for monolithic integrated optoelectronics
    (Institute of Electrical and Electronics Engineers, 2012-03-02) Yu, H. Y.; Park, J. H.; Okyay, Ali Kemal; Saraswat, K. C.
    Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.
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    Visualization of one-dimensional diffusion and spontaneous segregation of hydrogen in single crystals of VO2
    (Institute of Physics Publishing, 2016-07) Kasirga, T. S.; Coy, J. M.; Park, J. H.; Cobden, D. H.
    Hydrogen intercalation in solids is common, complicated, and very difficult to monitor. In a new approach to the problem, we have studied the profile of hydrogen diffusion in single-crystal nanobeams and plates of VO2, exploiting the fact that hydrogen doping in this material leads to visible darkening near room temperature connected with the metal-insulator transition at 65 �C. We observe hydrogen diffusion along the rutile c-axis but not perpendicular to it, making this a highly one-dimensional diffusion system. We obtain an activated diffusion coefficient ∼ 0.01 e-0.6eV/kBT cm2s-1, applicable in metallic phase. In addition, we observe dramatic supercooling of the hydrogen-induced metallic phase and spontaneous segregation of the hydrogen into stripes implying that the diffusion process is highly nonlinear, even in the absence of defects. Similar complications may occur in hydrogen motion in other materials but are not revealed by conventional measurement techniques.