Browsing by Author "Onbasli, M.C."
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Item Open Access Dipole antenna couplers for subwavelength metal-insulator-metal waveguides(Optical Society of America, 2010) Onbasli, M.C.; Okyay, Ali KemalNear-infrared light (λ=1550 nm) was coupled into a 100-nm-core Ag/SiO2/Ag waveguide using dipole antennas. We demonstrate that using antennas, the field intensity inside the waveguide can be enhanced by changing the antenna size and location. © 2010 OSA /FiO/LS 2010.Item Open Access Nanoantenna couplers for metal-insulator-metal waveguide interconnects(SPIE, 2010) Onbasli, M.C.; Okyay, Ali KemalState-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical signal processing. Size-mismatch between two fundamental components (micron-size fibers and a few hundred nanometers wide waveguides) demands compact coupling methods for implementation of large scale on-chip optoelectronic device integration. Existing solutions use waveguide tapering, which requires more than 4λ-long taper distances. We demonstrate that nanoantennas can be integrated with MIM for enhancing coupling into MIM plasmonic modes. Two-dimensional finite-difference time domain simulations of antennawaveguide structures for TE and TM incident plane waves ranging from λ = 1300 to 1600 nm were done. The same MIM (100-nm-wide Ag/100-nm-wide SiO2/100-nm-wide Ag) was used for each case, while antenna dimensions were systematically varied. For nanoantennas disconnected from the MIM; field is strongly confined inside MIM-antenna gap region due to Fabry-Perot resonances. Major fraction of incident energy was not transferred into plasmonic modes. When the nanoantennas are connected to the MIM, stronger coupling is observed and E-field intensity at outer end of core is enhanced more than 70 times. © 2010 SPIE.Item Open Access Silicon-germanium multi-quantum wells for extended functionality and lower cost integration(IEEE, 2010) Onbasli, M.C.; Yesilyurt, Alper; Yu H.Y.; Nayfeh, A.M.; Okyay, Ali KemalSilicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current. ©2010 IEEE.