Browsing by Author "Kazar, Ö."

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    Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure
    (Elsevier BV, 2014-09) Lisesivdin, S. B.; Atmaca, G.; Arslan, E.; Çakmakyapan S.; Kazar, Ö.; Bütün, S.; Ul-Hassan, J.; Janzén, E.; Özbay, Ekmel
    Hall effect measurements of a graphene-on-SiC system were carried out as a function of temperature (1.8-200 K) at a static magnetic field (0.51) With the analysis of temperature dependent single-field Hall data with the Simple Parallel Conduction Extraction Method (SPCEM), bulk and two-dimensional (2D) carrier densities and mobilities were extracted successfully. Bulk carrier is attributed to SIC substrate and 2D carrier is attributed to the graphene layer. For each SPCEM extracted carrier data, relevant three-dimensional or 2D scattering analyses were performed. Each SPCEM extracted carrier data were explained with the related scattering analyses. A temperature independent mobility component, which may related to an interaction between graphene and SIC, was observed for both scattering analyses with the same mobility limiting value. With the SPCEM, effective ionized impurity concentration of SiC substrate, extracted 2D-mobility, and sheet carrier density of the graphene layer are calculated with using temperature dependent static magnetic field Hall data. (c) 2014 Elsevier B.V. All rights reserved.
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    SiC substrate effects on electron transport in the epitaxial graphene layer
    (Springer, 2014) Arslan, E.; Çakmakyapan S.; Kazar, Ö.; Bütün, S.; Lişesivdin, S. B.; Cinel, N. A.; Ertaş, G.; Ardalı, Ş.; Tıraş, E.; Jawad-ul-Hassan,; Özbay, Ekmel; Janzén, E.
    Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one highmobility carrier (3493 cm2 /Vs at 300 K) and one low-mobility carrier (1115 cm2 /Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate.