Browsing by Author "Kashif, A. U."

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Open Access
Analysis of HfO2 and ZrO2 as high-K dielectric for CMOS nano devices
(Institute of Electrical and Electronics Engineers, 2022-05-16) Hasan, T.; Zafar, Salahuddin; Özbay, Ekmel; Kashif, A. U.
An analysis has been made on high-K dielectrics (HfO 2 and ZrO 2) for the CMOS process up to 14 nm FAB technology node. The aim is to study the reduction in gate leakage current for Nano-scale devices. High-K Dielectric having K ≥ 20 is beneficial for CMOS Nano-devices, reducing the gate leakage current when EOT ≤ 0.5 nm. MOS structure with high-K, i.e., HfO 2 and ZrO 2 , has been simulated in SILVACO T-CAD to consider as gate stack: metal/oxide/p-Si for the different FAB nodes; 45, 32, 22 & 14 nm. SiO 2 is considered a reference to optimize the MOS structure with high-K dielectric. As a result, 7–8 times the higher physical gate oxide layer is achieved compared to SiO 2 , which has a significant impact on minimizing the gate leakage current.
Open Access
GaN based LNA MMICs for X-band applications
(Institute of Electrical and Electronics Engineers, 2020) Zafar, Salahuddin; Osmanoğlu, Sinan; Öztürk, Mustafa; Çankaya, Büşra; Yılmaz, Doğan; Kashif, A. U.; Özbay, Ekmel
In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been investigated. LNA-1 and the first stage of LNA-2 is based on common source (CS) with inductive source degeneration topology. LNA-1 has a flat gain response of ±1.4 dB gain variation with a gain greater than 8 dB for 9 V drain voltage and 100 mA/mm drain current. Input return loss better than 9.8 dB and output return loss better than 12.8 dB have been achieved. The simulated value of noise figure for this design is less than 1.4 dB. In LNA-2 design, a two-stage topology is implemented to enhance amplifier's gain. The simulated values for LNA-2 show a gain greater than 16.8 dB with ±2.9 dB gain variation. Input and output return loss values are better than 8.8 dB and 10 dB, respectively. The value of noise figure for this design is less than 1.7 dB in the desired frequency range. Both designs, having state-of-the art small dimensions, are suitable for their potential applications for space communications, Radar, satellite communications etc.