Browsing by Author "Gorgulu, K."

Now showing 1 - 3 of 3

Open Access
All-silicon ultra-broadband infrared light absorbers
(Nature Publishing Group, 2016) Gorgulu, K.; Gok, A.; Yilmaz, M.; Topalli, K.; Blylkll, N.; Okyay, Ali Kemal
Absorbing infrared radiation efficiently is important for critical applications such as thermal imaging and infrared spectroscopy. Common infrared absorbing materials are not standard in Si VLSI technology. We demonstrate ultra-broadband mid-infrared absorbers based purely on silicon. Broadband absorption is achieved by the combined effects of free carrier absorption, and vibrational and plasmonic absorption resonances. The absorbers, consisting of periodically arranged silicon gratings, can be fabricated using standard optical lithography and deep reactive ion etching techniques, allowing for cost-effective and wafer-scale fabrication of micro-structures. Absorption wavebands in excess of 15 micrometers (5-20 μm) are demonstrated with more than 90% average absorptivity. The structures also exhibit broadband absorption performance even at large angles of incidence (θ = 50°), and independent of polarization.
Open Access
High-conductivity silicon based spectrally selective plasmonic surfaces for sensing in the infrared region
(Institute of Physics Publishing, 2017) Gorgulu, K.; Gok, A.; Yilmaz, M.; Topalli K.; Okyay, Ali Kemal
Plasmonic perfect absorbers have found a wide range of applications in imaging, sensing, and light harvesting and emitting devices. Traditionally, metals are used to implement plasmonic structures. For sensing applications, it is desirable to integrate nanophotonic active surfaces with biasing and amplification circuitry to achieve monolithic low cost solutions. Commonly used plasmonic metals such as Au and Ag are not compatible with standard silicon complementary metal-oxide-semiconductor (CMOS) technology. Here we demonstrate plasmonic perfect absorbers based on high conductivity silicon. Standard optical lithography and reactive ion etching techniques were used for the patterning of the samples. We present computational and experimental results of surface plasmon resonances excited on a silicon surface at normal and oblique incidences. We experimentally demonstrate our absorbers as ultra-low cost, CMOS-compatible and efficient refractive index sensing surfaces. The experimental results reveal that the structure exhibits a sensitivity of around 11 000 nm/RIU and a figure of merit of up to 2.5. We also show that the sensing performance of the structure can be improved by increasing doping density.
Open Access
LWIR all-atomic layer deposition ZnO bilayer microbolometer for thermal imaging
(SPIE, 2017) Poyraz, M.; Gorgulu, K.; Sisman, Z.; Tanrikulu, M. Y.; Okyay, Ali Kemal
We propose an all-ZnO bilayer microbolometer, operating in the long-wave infrared regime that can be implemented by consecutive atomic layer deposition growth steps. Bilayer design of the bolometer provides very high absorption coefficients compared to the same thickness of a single ZnO layer. High absorptivity of the bilayer structure enables higher performance (lower noise equivalent temperature difference and time constant values) compared to single-layer structure. We observe these results computationally by conducting both optical and thermal simulations. © 2017 Society of Photo-Optical Instrumentation Engineers (SPIE).