Browsing by Author "Deminskyi, Petro"

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Open Access
Area-selective atomic layer deposition of noble metals: polymerized fluorocarbon layers as effective growth inhibitors
(AVS Science and Technology Society, 2021-01-29) Deminskyi, Petro; Haider, Ali; Eren, Hamit; Khan, Talha Masood; Bıyıklı, Necmi
The increasingly complex nanoscale three-dimensional and multilayered structures utilized in nanoelectronic, catalytic, and energy conversion/storage devices necessitate novel substrate-selective material deposition approaches featuring bottom-up and self-aligned precision processing. Here, we demonstrate the area-selective atomic layer deposition (AS-ALD) of two noble metals, Pt and Pd, by using a plasma-polymerized fluorocarbon layer as growth inhibition surfaces. The contact angle, x-ray photoelectron spectroscopy (XPS), and scanning electron microscopy measurements were performed to investigate the blocking ability of polymerized fluorocarbon (CFx) layers against ALD-grown metal films. Both Pt and Pd showed significant nucleation delays on fluorocarbon surfaces. Self-aligned film deposition is confirmed using this strategy by growing Pt and Pd on the microscale lithographically patterned CFx/Si samples. CFx blocking layer degradation during ozone exposure was analyzed using XPS measurements, which confirmed the oxygen physisorption as the main responsible surface reaction with further hydroxyl group formation on the CFx surface. Our work reveals that the CFx layer is compatible with an ozone coreactant until the blocking polymer cannot withstand oxygen physisorption. Our results could potentially be used to investigate and develop radical-assisted AS-ALD processes for a wider selection of materials.
Open Access
Compact 1.5-GHz intra-burst repetition rate Yb-doped all-PM-fiber laser system for ablation-cooled material removal
(OSA, 2017) Akçaalan, Önder; Kalaycıoğlu, Hamit; Elahi, Parviz; Deminskyi, Petro; İlday, Fatih Ömer
Summary form only given. Femtosecond (fs) laser pulse sources have become increasingly popular in the last decade as a result of their practical features, such as insensitivity to environmental variations, versatile designs, high power outputs. However, much of the progress is with non-integrated specialty fibers, which involve some compromise on these practical features. Monolithic fiber chirped pulse amplification (CPA) systems are very attractive for industrial and scientific applications due to the features such as compactness, reliability and robustness. Although fs fiber laser systems are powerful technologies for material and tissue processing, limited ablation rates and high energy are drawbacks. Recently, we identified a new regime of laser-material interaction, ablation cooled material removal [1], where the repetition rate has to be high enough so that the targeted spot size cannot cool down substantially by heat conduction which scales down ablation threshold by several orders of magnitude and reduces thermal effects to the bulk of the target. Here, we demonstrate a compact all-PM-fiber laser amplifier system with an intra-burst repetition rate of 1.5 GHz able to produce bursts ranging from 20-ns to 65-ns duration with 20 μJ to 80 μJ total energy, respectively, and pulses with up to 1 μJ individual energy at burst repetition rates ranging from 25 kHz to 200 kHz (Fig. 1(a)). The seed signal is generated by a home-built all-normal dispersion oscillator with a spectrum centered at 1035 nm and 20-nm (FWHM), 100 mW output and 385 MHz repetition rate (Fig. 1(b)). After the oscillator, rest of the system is built of polarization maintaining (PM) components and a single-mode pre-amplifier controls both dispersion and nonlinearity in the amplifier system. The pulses are stretched with a 110 m-long fiber after this pre-amplifier and raised to a repetition rate of 1.5 GHz by a multiplier. The signal is amplified again by a second single-mode pre-amplifier before converted into burst-mode via an acousto-optic modulator (AOM). Finally, a forward-pumped double-clad power amplifier, built of PM 10/125 Yb 1200 DC (nLight) fiber and pumped by a 18-W wavelength stabilized diode, boosts the optical power. To compress the pulses, a pair of 1200 line/mm transmission gratings is preferred to denser gratings to limit third order dispersion (TOD). Further, fiber lengths are shortened as much as possible to minimize nonlinear effects including Raman scattering and thus the power conversion efficiency is relatively low, around 20% for the power amplifier. The autocorrelation measurement for the compressed pulses indicates a width of ~250 fs (Fig. 1(d)). The amplified output spectrum of FWHM of 14 nm is shown in (Fig. 1(c)).
Open Access
Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
(IEEE, 2016) Deminskyi, Petro; Haider, Ali; Bıyıklı, Necmi; Ovsianitsky, A.; Tsymbalenko, A.; Kotov, D.; Matkivskyi, V.; Liakhova, N.; Osinsky, V.
The paper consider oxygen contamination of HCPA ALD grown GaN films under an air conditioning and during different time duration. High resolution XPS analysis of HCPA ALD grown GaN films after diluted 1:10 HF(41 %) : H2O and undiluted HF (41 %) influence on oxygen impurities was investigated. Lesser oxygen impurities have been observed. Better resistivity to oxygen atoms of GaN thin films after diluted HF solution treatment was achieved compared to undiluted HF treatment and without treatment.
Open Access
Slicing crystalline silicon wafer by deep subsurface laser processing and selective chemical etching
(Institute of Electrical and Electronics Engineers Inc., 2019) Borra, M. Z.; Nasser, H.; Çiftpınar, E. H.; Turnalı, Ahmet; Deminskyi, Petro; Çolakoğlu, T.; Tokel, Onur; İlday, Fatih Ömer; Pavlov, I.; Turan, R.; Bek, A.
In this work, we demonstrate use of laser-induced silicon slicing (LASIS) technique to fabricate crystalline silicon (c-Si) slices [1]. In LASIS method, a nanosecond-pulsed fiber laser operating at 1.55 μm wavelength, focused deep in Si subsurface induces structural modifications near the focal point due to multiphoton absorption. The raster scan of the focal position inside of the sample, positioned in cross-sectional plane with respect to laser beam, produces a quasi-2D modified Si region. The modified Si region is then etched by cupper nitrite (Cu(NO 3 ) 2 )-based selective chemical etchant which selectively targets the laser-modified regions. In order to achieve high etch rate, smooth and defect-free surface; different concentrations of etchant components and etch durations were investigated.