Browsing by Author "Borra, M. Z."

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Open Access
In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon
(Nature Publishing Group, 2017) Tokel, O.; Turnalı, A.; Makey, G.; Elahi, P.; Çolakoǧlu, T.; Ergeçen E.; Yavuz, Ö.; Hübner R.; Borra, M. Z.; Pavlov, I.; Bek, A.; Turan, R.; Kesim, D. K.; Tozburun, S.; Ilday, S.; Ilday, F. Ö.
Silicon is an excellent material for microelectronics and integrated photonics 1-3, with untapped potential for mid-infrared optics 4 . Despite broad recognition of the importance of the third dimension 5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements 7, electronic devices and better electronic-photonic integration are lacking 8 . Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-μm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface - that is, 'in-chip' - microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.
Open Access
Laser-slicing of silicon with 3D nonlinear laser lithography
(OSA, 2017) Tokel, Onur; Turnalı, Ahmet; Çolakoğlu, T.; İlday, Serim; Borra, M. Z.; Pavlov, Ihor; Bek, A.; Turan, R.; İlday, Fatih Ömer
Recently, we have showed a direct laser writing method that exploits nonlinear interactions to form subsurface modifications in silicon. Here, we use the technique to demonstrate laser-slicing of silicon and its applications.
Open Access
Slicing crystalline silicon wafer by deep subsurface laser processing and selective chemical etching
(Institute of Electrical and Electronics Engineers Inc., 2019) Borra, M. Z.; Nasser, H.; Çiftpınar, E. H.; Turnalı, Ahmet; Deminskyi, Petro; Çolakoğlu, T.; Tokel, Onur; İlday, Fatih Ömer; Pavlov, I.; Turan, R.; Bek, A.
In this work, we demonstrate use of laser-induced silicon slicing (LASIS) technique to fabricate crystalline silicon (c-Si) slices [1]. In LASIS method, a nanosecond-pulsed fiber laser operating at 1.55 μm wavelength, focused deep in Si subsurface induces structural modifications near the focal point due to multiphoton absorption. The raster scan of the focal position inside of the sample, positioned in cross-sectional plane with respect to laser beam, produces a quasi-2D modified Si region. The modified Si region is then etched by cupper nitrite (Cu(NO 3 ) 2 )-based selective chemical etchant which selectively targets the laser-modified regions. In order to achieve high etch rate, smooth and defect-free surface; different concentrations of etchant components and etch durations were investigated.