Browsing by Author "Banks, T."

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    A 500 MHz carbon nanotube transistor oscillator
    (American Institute of Physics, 2008-09) Pesetski, A. A.; Baumgardner, J. E.; Krishnaswamy, S. V.; Zhang, H.; Adam, J. D.; Kocabaş, Coşkun; Banks, T.; Rogers, J. A.
    Operation of a carbon nanotube field effect transistor (FET) oscillator at a record frequency of 500 MHz is described. The FET was fabricated using a large parallel array of single-walled nanotubes grown by chemical vapor deposition on ST-quartz substrates. Matching of the gate capacitance with a series inductor enabled greater than unity net oscillator loop gain to be achieved at 500 MHz.
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    High-frequency performance of submicrometer transistors that use aligned arrays of single-walled carbon nanotubes
    (American Chemical Society, 2009-04-08) Kocabaş, Coşkun; Dunham, S.; Cao, Q.; Cimino, K.; Ho, X.; Kim, H.-S.; Dawson, D.; Payne, J.; Stuenkel, M.; Zhang, H.; Banks, T.; Feng, M.; Rotkin, S. V.; Rogers, J. A.
    The unique electronic properties of single-walled carbon nanotubes (SWNTs) make them promising candidates for next generation electronics, particularly in systems that demand high frequency (e.g., radio frequency, RF) operation. Transistors that incorporate perfectly aligned, parallel arrays of SWNTs avoid the practical limitations of devices that use individual tubes, and they also enable comprehensive experimental and theoretical evaluation of the intrinsic properties. Thus, devices consisting of arrays represent a practical route to use of SWNTs for RF devices and circuits. The results presented here reveal many aspects of device operation in such array layouts, including full compatibility with conventional small signal models of RF response. Submicrometer channel length devices show unity current gain (ft) and unity power gain frequencies (fmax) as high as ∼5 and ∼9 GHz, respectively, with measured scattering parameters (S-parameters) that agree quantitatively with calculation. The small signal models of the devices provide the essential intrinsic parameters: saturation velocities of 1.2 × 107 cm/s and intrinsic values of ft of ∼30 GHz for a gate length of 700 nm, increasing with decreasing length. The results provide clear insights into the challenges and opportunities of SWNT arrays for applications in RF electronics.
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    Molecular scale buckling mechanics in individual aligned single-wall carbon nanotubes on elastomeric substrates
    (American Chemical Society, 2008) Khang, D. -Y.; Xiao, J.; Kocabaş, Coşkun; MacLaren, S.; Banks, T.; Jiang, H.; Huang, Y. Y.; Rogers, J. A.
    We have studied the scaling of controlled nonlinear buckling processes in materials with dimensions in the molecular range (i.e., ∼1 nm) through experimental and theoretical studies of buckling in individual single-wall carbon nanotubes on substrates of poly(dimethylsiloxane). The results show not only the ability to create and manipulate patterns of buckling at these molecular scales, but also, that analytical continuum mechanics theory can explain, quantitatively, all measurable aspects of this system. Inverse calculation applied to measurements of diameterdependent buckling wavelengths yields accurate values of the Young’s moduli of individual SWNTs. As an example of the value of this system beyond its use in this type of molecular scale metrology, we implement parallel arrays of buckled SWNTs as a class of mechanically stretchable conductor.