A 500 MHz carbon nanotube transistor oscillator

Date

2008-09

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Source Title

Applied Physics Letters

Print ISSN

0003-6951

Electronic ISSN

1077-3118

Publisher

American Institute of Physics

Volume

93

Issue

12

Pages

1 - 2

Language

English

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Abstract

Operation of a carbon nanotube field effect transistor (FET) oscillator at a record frequency of 500 MHz is described. The FET was fabricated using a large parallel array of single-walled nanotubes grown by chemical vapor deposition on ST-quartz substrates. Matching of the gate capacitance with a series inductor enabled greater than unity net oscillator loop gain to be achieved at 500 MHz.

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Published Version (Please cite this version)