A 500 MHz carbon nanotube transistor oscillator

Date
2008-09
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Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
1077-3118
Publisher
American Institute of Physics
Volume
93
Issue
12
Pages
1 - 2
Language
English
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Abstract

Operation of a carbon nanotube field effect transistor (FET) oscillator at a record frequency of 500 MHz is described. The FET was fabricated using a large parallel array of single-walled nanotubes grown by chemical vapor deposition on ST-quartz substrates. Matching of the gate capacitance with a series inductor enabled greater than unity net oscillator loop gain to be achieved at 500 MHz.

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Published Version (Please cite this version)