Browsing by Author "Aytekin, S."
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Item Open Access Thermally stimulated currents in layered Ga4SeS3 semiconductor(2004) Aytekin, S.; Yuksek, N.S.; Goktepe, M.; Gasanly, N.M.; Aydınlı, AtillaThermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the current flowing along the c-axis in the temperature range of 10 to 150 K. The results are analyzed according to various methods, such as curve fitting, initial rise and Chcn's methods, which seem to be in good agreement with each other. Experimental evidence is found for the presence of three trapping centers in Ga4SeS3 with activation energies of 70, 210 and 357 meV. The calculation yielded 7.9 × 10-21,7.0 × 10 -19 and 1.5 × 10-13 cm2 for the capture cross section, and 1.6 × 1010, 6.5 × 1010 and 1.2 × 1011 cm-3 for the concentration of the traps studied. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinlteim.Item Open Access Trap levels in layered semiconductor Ga2SeS(Elsevier, 2004) Aydınlı, Atilla; Gasanly, N. M.; Aytekin, S.Trap levels in nominally undoped Ga2SeS layered crystals have been characterized by thermally stimulated current (TSC) measurements. During the measurements, current was allowed to flow along the c-axis of the crystals in the temperature range of 10-300 K. Two distinct TSC peaks were observed in the spectra, deconvolution of which yielded three peaks. The results are analyzed by curve fitting, peak shape and initial rise methods. They all seem to be in good agreement with each other. The activation energies of three trapping centers in Ga2SeS are found to be 72, 100 and 150 meV. The capture cross section of these traps are 6.7×10-23, 1.8×10-23 and 2.8×10-22cm2 with concentrations of 1.3×1012, 5.4×1012 and 4.2×1012cm-3, respectively.