Browsing by Author "Ata, E."

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    High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation
    (A I P Publishing LLC, 1998-05-25) Ünlü, M. S.; Gökkavas, M.; Onat, B. M.; Ata, E.; Özbay, Ekmel; Mirin, R. P.; Knopp, K. J.; Bertness, K. A.; Christensen, D. H.
    High-speed resonant cavity enhanced Schottky photodiodes operating in 800-850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs material system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry-Perot cavity. The detectors exhibit a peak quantum efficiency of η=0.5 at λ=827nm wavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GHz.