Browsing by Author "Özcelik, S."

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    Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition
    (Elsevier BV, 2008-02-29) Acar, S.; Lisesivdin, S. B.; Kasap, M.; Özcelik, S.; Özbay, Ekmel
    Resistivity and Hall effect measurements on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal organic chemical vapor deposition have been carried out as a function of temperature (20-300 K) and magnetic field (0-1.4 T). Variable magnetic field Hall data have been analyzed using the improved quantitative mobility spectrum analysis technique. The mobility and density of the two-dimensional electron gas at the AlGaN/GaN interface and the two-dimensional hole gas at the GaN/AIN interface are separated by quantitative mobility spectrum analysis. The analysis shows that two-channel conduction is present in nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrate.
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    Microstructural defect properties of InGaN/GaN blue light emitting diode structures
    (Springer US, 2014-06-28) Bas, Y.; Demirel, P.; Akin, N.; Başköse, C.; Özen, Y.; Kınacı, B.; Öztürk, M. K.; Özcelik, S.; Özbay, Ekmel
    In this paper, we study structural and morphological properties of metal-organic chemical vapour deposition-grown InGaN/GaN light emitting diode (LED) structures with different indium (In) content by means of high-resolution X-ray diffraction, atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL) and current-voltage characteristic (I-V). We have found out that the tilt and twist angles, lateral and vertical coherence lengths of mosaic blocks, grain size, screw and edge dislocation densities of GaN and InGaN layers, and surface roughness monotonically vary with In content. Mosaic defects obtained due to temperature using reciprocal lattice space map has revealed optimized growth temperature for active InGaN layer of MQW LED. It has been observed in this growth temperature that according to AFM result, LED structure has high crystal dimension, and is rough whereas according to PL and FTIR results, bandgap energy shifted to blue, and energy peak half-width decreased at high values. According to I-V measurements, it was observed that LED reacted against light at optimized temperature. In conclusion, we have seen that InGaN MQW structure's structural, optical and electrical results supported one another.
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    Well parameters of two-dimensional electron gas in Al0.88In 0.12N/AlN/GaN/AlN heterostructures grown by MOCVD
    (Wiley, 2009-12-01) Tasli, P.; Lisesivdin, S. B.; Yildiz, A.; Kasap, M.; Arslan, E.; Özcelik, S.; Özbay, Ekmel
    Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al0.88In 0.12N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (MOCVD). Magnetic field dependent Hall data were analyzed by using the quantitative mobility spectrum analysis (QMSA). A two-dimensional electron gas (2DEG) channel located at the Al0.88In 0.12N/GaN interface with an AlN interlayer and a two-dimensional hole gas (2DHG) channel located at the GaN/AlN interface were determined for Al 0.88In0.12N/AlN/GaN/AlN heterostructures. The interface parameters, such as quantum well width, the deformation potential constant and correlation length as well as the dominant scattering mechanisms for the Al 0.88In0.12N/GaN interface with an AlN interlayer were determined from scattering analyses based on the exact 2DEG carrier density and mobility obtained with QMSA