(American Institute of Physics, 2008-09) Pesetski, A. A.; Baumgardner, J. E.; Krishnaswamy, S. V.; Zhang, H.; Adam, J. D.; Kocabaş, Coşkun; Banks, T.; Rogers, J. A.
Operation of a carbon nanotube field effect transistor (FET) oscillator at a record frequency of 500 MHz is described. The FET was fabricated using a large parallel array of single-walled nanotubes grown by chemical vapor deposition on ST-quartz substrates. Matching of the gate capacitance with a series inductor enabled greater than unity net oscillator loop gain to be achieved at 500 MHz.
