Multifunctional integrated photonic switches

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dc.citation.epage96en_US
dc.citation.issueNumber1en_US
dc.citation.spage86en_US
dc.citation.volumeNumber11en_US
dc.contributor.authorDemir, H. M.en_US
dc.contributor.authorSabnis, V. A.en_US
dc.contributor.authorFidaner, O.en_US
dc.contributor.authorZheng, J.-F.en_US
dc.contributor.authorHarris, J. S.en_US
dc.contributor.authorMiller, D. A. B.en_US
dc.date.accessioned2019-02-13T13:48:51Z
dc.date.available2019-02-13T13:48:51Z
dc.date.issued2005en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractTraditional optical-electronic-optical (o-e-o) conversion in today’s optical networks requires cascading separately packaged electronic and optoelectronic chips and propagating high-speed electrical signals through and between these discrete modules. This increases the packaging and component costs, size, power consumption, and heat dissipation. As a remedy, we introduce a novel, chip-scale photonic switching architecture that operates by confining high-speed electrical signals in a compact optoelectronic chip and provides multiple network functions on such a single chip. This new technology features low optical and electrical power consumption, small installation space, high-speed operation, two-dimensional scalability, and remote electrical configurability. In this paper, we present both theoretical and experimental discussion of our monolithically integrated photonic switches that incorporate quantum-well waveguide modulators directly driven by on-chip surface-illuminated photodetectors. These switches can be conveniently arrayed two-dimensionally on a single chip to realize a number of network functions. Of those, we have experimentally demonstrated arbitrary wavelength conversion across 45 nm and dual-wavelength broadcasting over 20 nm, both spanning the telecommunication center band (1530–1565 nm) at switching speeds up to 2.5 Gb/s. Our theoretical calculations predict the capability of achieving optical switching at rates in excess of 10 Gb/s using milliwatt-level optical and electrical switching powers.en_US
dc.identifier.eissn1558-4542
dc.identifier.issn1077-260X
dc.identifier.urihttp://hdl.handle.net/11693/49461
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.source.titleIEEE Journal on Selected Topics in Quantum Electronicsen_US
dc.subjectIntegrated optoelectronic devicesen_US
dc.subjectModulatorsen_US
dc.subjectPhotonic switchesen_US
dc.subjectQuantum-well (QW) devicesen_US
dc.titleMultifunctional integrated photonic switchesen_US
dc.typeArticleen_US
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