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      High-frequency performance of submicrometer transistors that use aligned arrays of single-walled carbon nanotubes

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      Author(s)
      Kocabaş, Coşkun
      Dunham, S.
      Cao, Q.
      Cimino, K.
      Ho, X.
      Kim, H.-S.
      Dawson, D.
      Payne, J.
      Stuenkel, M.
      Zhang, H.
      Banks, T.
      Feng, M.
      Rotkin, S. V.
      Rogers, J. A.
      Date
      2009-04-08
      Source Title
      Nano Letters
      Print ISSN
      1530-6984
      Electronic ISSN
      1530-6992
      Publisher
      American Chemical Society
      Volume
      9
      Issue
      5
      Pages
      1937 - 1943
      Language
      English
      Type
      Article
      Item Usage Stats
      182
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      211
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      Abstract
      The unique electronic properties of single-walled carbon nanotubes (SWNTs) make them promising candidates for next generation electronics, particularly in systems that demand high frequency (e.g., radio frequency, RF) operation. Transistors that incorporate perfectly aligned, parallel arrays of SWNTs avoid the practical limitations of devices that use individual tubes, and they also enable comprehensive experimental and theoretical evaluation of the intrinsic properties. Thus, devices consisting of arrays represent a practical route to use of SWNTs for RF devices and circuits. The results presented here reveal many aspects of device operation in such array layouts, including full compatibility with conventional small signal models of RF response. Submicrometer channel length devices show unity current gain (ft) and unity power gain frequencies (fmax) as high as ∼5 and ∼9 GHz, respectively, with measured scattering parameters (S-parameters) that agree quantitatively with calculation. The small signal models of the devices provide the essential intrinsic parameters: saturation velocities of 1.2 × 107 cm/s and intrinsic values of ft of ∼30 GHz for a gate length of 700 nm, increasing with decreasing length. The results provide clear insights into the challenges and opportunities of SWNT arrays for applications in RF electronics.
      Keywords
      Nanotubes
      Electrical properties
      Electrodes
      Carbon nanotubes
      Transistors
      Permalink
      http://hdl.handle.net/11693/53548
      Published Version (Please cite this version)
      https://doi.org/10.1021/nl9001074
      Collections
      • Advanced Research Laboratories (ARL) 35
      • Department of Physics 2550
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