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dc.contributor.authorSheremet, V.en_US
dc.contributor.authorGheshlaghi, N.en_US
dc.contributor.authorSözen, M.en_US
dc.contributor.authorElçi, M.en_US
dc.contributor.authorSheremet, N.en_US
dc.contributor.authorAydınlı, A.en_US
dc.contributor.authorAltuntaş, I.en_US
dc.contributor.authorDing, K.en_US
dc.contributor.authorAvrutin, V.en_US
dc.contributor.authorÖzgür, Ü.en_US
dc.contributor.authorMorkoç, H.en_US
dc.date.accessioned2019-02-21T16:02:02Z
dc.date.available2019-02-21T16:02:02Z
dc.date.issued2018en_US
dc.identifier.issn0749-6036
dc.identifier.urihttp://hdl.handle.net/11693/49954
dc.description.abstractWe investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step-graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%.
dc.description.sponsorshipFinancial support for this work is provided by the Scientific and Technological Research Council of Turkey (Grant No: 113G042 ). Ismail Altuntaş acknowledges the Ph.D. Grant support from TUBITAK. We thank UNAM-National Nanotechnology Research Center at Bilkent University for access to fabrication and characterization equipment.
dc.language.isoEnglish
dc.source.titleSuperlattices and Microstructuresen_US
dc.relation.isversionofhttps://doi.org/10.1016/j.spmi.2018.02.002
dc.subjectInGaN/GaNen_US
dc.subjectLight-emitting diodeen_US
dc.subjectStep-graded electron injectoren_US
dc.subjectStress compensation layeren_US
dc.titleInGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectorsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage253en_US
dc.citation.epage261en_US
dc.citation.volumeNumber116en_US
dc.relation.projectTürkiye Bilimsel ve Teknolojik Araştirma Kurumu, TÜBITAK: 113G042
dc.identifier.doi10.1016/j.spmi.2018.02.002
dc.publisherAcademic Press
dc.embargo.release2020-04-01en_US


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