InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors
dc.citation.epage | 261 | en_US |
dc.citation.spage | 253 | en_US |
dc.citation.volumeNumber | 116 | en_US |
dc.contributor.author | Sheremet, V. | en_US |
dc.contributor.author | Gheshlaghi, N. | en_US |
dc.contributor.author | Sözen, M. | en_US |
dc.contributor.author | Elçi, M. | en_US |
dc.contributor.author | Sheremet, N. | en_US |
dc.contributor.author | Aydınlı, A. | en_US |
dc.contributor.author | Altuntaş, I. | en_US |
dc.contributor.author | Ding, K. | en_US |
dc.contributor.author | Avrutin, V. | en_US |
dc.contributor.author | Özgür, Ü. | en_US |
dc.contributor.author | Morkoç, H. | en_US |
dc.date.accessioned | 2019-02-21T16:02:02Z | |
dc.date.available | 2019-02-21T16:02:02Z | |
dc.date.issued | 2018 | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step-graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%. | |
dc.description.sponsorship | Financial support for this work is provided by the Scientific and Technological Research Council of Turkey (Grant No: 113G042 ). Ismail Altuntaş acknowledges the Ph.D. Grant support from TUBITAK. We thank UNAM-National Nanotechnology Research Center at Bilkent University for access to fabrication and characterization equipment. | |
dc.embargo.release | 2020-04-01 | en_US |
dc.identifier.doi | 10.1016/j.spmi.2018.02.002 | |
dc.identifier.issn | 0749-6036 | |
dc.identifier.uri | http://hdl.handle.net/11693/49954 | |
dc.language.iso | English | |
dc.publisher | Academic Press | |
dc.relation.isversionof | https://doi.org/10.1016/j.spmi.2018.02.002 | |
dc.relation.project | Türkiye Bilimsel ve Teknolojik Araştirma Kurumu, TÜBITAK: 113G042 | |
dc.source.title | Superlattices and Microstructures | en_US |
dc.subject | InGaN/GaN | en_US |
dc.subject | Light-emitting diode | en_US |
dc.subject | Step-graded electron injector | en_US |
dc.subject | Stress compensation layer | en_US |
dc.title | InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors | en_US |
dc.type | Article | en_US |
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