InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors

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2020-04-01
Date
2018
Authors
Sheremet, V.
Gheshlaghi, N.
Sözen, M.
Elçi, M.
Sheremet, N.
Aydınlı, A.
Altuntaş, I.
Ding, K.
Avrutin, V.
Özgür, Ü.
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Source Title
Superlattices and Microstructures
Print ISSN
0749-6036
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Publisher
Academic Press
Volume
116
Issue
Pages
253 - 261
Language
English
Type
Article
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Abstract

We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step-graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%.

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