Effects of field plate on the maximum temperature and temperature distribution for gan HEMT devices
Proceedings of the ASME 2016 Summer Heat Transfer Conference (HT2016)
American Society of Mechanical Engineers
Item Usage Stats
Field plated GaN high electron mobility transistors (HEMTs) are widely preferred amongst other GaN HEMT devices because of their ability to regulate electric field at high power densities. When operated at high power densities, GaN HEMTs suffer significantly from the concentrated heating effects in a small region called hotspot located closer to the drain edge of the gate. Although; the stabilizing effect of field plate on the electrical field distribution in HEMTs is known by researchers, its effect on temperature distribution and the hotspot temperature is still not studied to a greater extend. For this purpose, finite element thermal modelling of devices with different sizes of field plates are performed using the joule heating distribution data obtained from 2D electrical simulations. Results obtained from such combined model show that the existence of a field plate changes the electrical field, therefore the heat generation distribution within device. Moreover; increasing the size of the field plate has an effect on the maximum temperature at the hotspot region. The results are used to analyze these effects and improve usage of field plates for high electron mobility transistors to obtain better temperature profiles. Copyright © 2016 by ASME.
Field effect transistors
Electrical field distributions
Gan high electron mobility transistors
High electron mobility transistors
Published Version (Please cite this version)http://dx.doi.org/10.1115/HT2016-7367
Showing items related by title, author, creator and subject.
Electrospinning of functional poly(methyl methacrylate) nanofibers containing cyclodextrin-menthol inclusion complexes Uyar, Tamer; Nur, Y.; Hacaloglu, J.; Besenbacher, F. (Institute of Physics Publishing, 2009)Electrospinning of nanofibers with cyclodextrin inclusion complexes (CD-ICs) is particularly attractive since distinct properties can be obtained by combining the nanofibers with specific functions of the CD-ICs. Here we ...
Yildiz, A.; Lisesivdin, S.B.; Altuntas H.; Kasap, M.; Ozcelik, S. (2009)The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at ...
Namnabat, M.; Behrouzinia, S.; Moradi, A. R.; Khorasani, K. (Cambridge University Press, 2016)The output power and the temperature profile of a copper vapour laser were investigated versus frequency with various kinds of back mirror in its resonator cavity. A semi-experimental method was used for measuring the ...