Effects of field plate on the maximum temperature and temperature distribution for gan HEMT devices

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buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.volumeNumber1en_US
dc.contributor.authorKara D.en_US
dc.contributor.authorDonmezer N.en_US
dc.contributor.authorCanan, Talha Furkanen_US
dc.contributor.authorŞen, Özlemen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialWashington, DC, USAen_US
dc.date.accessioned2018-04-12T11:47:51Z
dc.date.available2018-04-12T11:47:51Z
dc.date.issued2016en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionConference name: Proceedings of the ASME 2016 Heat Transfer Summer Conference HT2016en_US
dc.descriptionDate of Conference: July 10–14, 2016en_US
dc.description.abstractField plated GaN high electron mobility transistors (HEMTs) are widely preferred amongst other GaN HEMT devices because of their ability to regulate electric field at high power densities. When operated at high power densities, GaN HEMTs suffer significantly from the concentrated heating effects in a small region called hotspot located closer to the drain edge of the gate. Although; the stabilizing effect of field plate on the electrical field distribution in HEMTs is known by researchers, its effect on temperature distribution and the hotspot temperature is still not studied to a greater extend. For this purpose, finite element thermal modelling of devices with different sizes of field plates are performed using the joule heating distribution data obtained from 2D electrical simulations. Results obtained from such combined model show that the existence of a field plate changes the electrical field, therefore the heat generation distribution within device. Moreover; increasing the size of the field plate has an effect on the maximum temperature at the hotspot region. The results are used to analyze these effects and improve usage of field plates for high electron mobility transistors to obtain better temperature profiles. Copyright © 2016 by ASME.en_US
dc.identifier.doi10.1115/HT2016-7367en_US
dc.identifier.isbn9780791850329
dc.identifier.urihttp://hdl.handle.net/11693/37681
dc.language.isoEnglishen_US
dc.publisherAmerican Society of Mechanical Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1115/HT2016-7367en_US
dc.source.titleProceedings of the ASME 2016 Summer Heat Transfer Conference (HT2016)en_US
dc.subjectElectric fieldsen_US
dc.subjectElectron mobilityen_US
dc.subjectField effect transistorsen_US
dc.subjectGallium nitrideen_US
dc.subjectHeat pipesen_US
dc.subjectHeat transferen_US
dc.subjectMicrochannelsen_US
dc.subjectNanosystemsen_US
dc.subjectTemperature distributionen_US
dc.subjectThermodynamic propertiesen_US
dc.subjectElectrical field distributionsen_US
dc.subjectElectrical simulationen_US
dc.subjectGan high electron mobility transistorsen_US
dc.subjectHeating distributionsen_US
dc.subjectHotspot temperatureen_US
dc.subjectMaximum temperatureen_US
dc.subjectStabilizing effectsen_US
dc.subjectTemperature profilesen_US
dc.subjectHigh electron mobility transistorsen_US
dc.titleEffects of field plate on the maximum temperature and temperature distribution for gan HEMT devicesen_US
dc.typeConference Paperen_US
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