Nanoantenna couplers for metal-insulator-metal waveguide interconnects
Okyay, A., K.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/28439
Proceedings of SPIE - The International Society for Optical Engineering
- Conference Paper 
State-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical signal processing. Size-mismatch between two fundamental components (micron-size fibers and a few hundred nanometers wide waveguides) demands compact coupling methods for implementation of large scale on-chip optoelectronic device integration. Existing solutions use waveguide tapering, which requires more than 4λ-long taper distances. We demonstrate that nanoantennas can be integrated with MIM for enhancing coupling into MIM plasmonic modes. Two-dimensional finite-difference time domain simulations of antennawaveguide structures for TE and TM incident plane waves ranging from λ = 1300 to 1600 nm were done. The same MIM (100-nm-wide Ag/100-nm-wide SiO2/100-nm-wide Ag) was used for each case, while antenna dimensions were systematically varied. For nanoantennas disconnected from the MIM; field is strongly confined inside MIM-antenna gap region due to Fabry-Perot resonances. Major fraction of incident energy was not transferred into plasmonic modes. When the nanoantennas are connected to the MIM, stronger coupling is observed and E-field intensity at outer end of core is enhanced more than 70 times. © 2010 SPIE.
Showing items related by title, author, creator and subject.
Atar F.B.; Battal, E.; Aygun L.E.; Daglar, B.; Bayindir, M.; Okyay, A., K. (2013)We demonstrate a novel semiconductor-less photovoltaic device and investigate the plasmonic effects on this device structure. The device is made of metal and dielectric layers and the operation is based on hot carrier ...
Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method Yildiz, A.; Lisesivdin, S.B.; Kasap, M.; Ozcelik, S.; Ozbay, E.; Balkan, N. (2010)The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities ...
Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 ≤ x ≤ 0.135) layers Yildiz, A.; Lisesivdin, S.B.; Tasli P.; Ozbay, E.; Kasap, M. (2010)The low-temperature conductivity of InxGa1-xN alloys (0.06 ≤ x ≤ 0.135) is analyzed as a function of indium composition (x). Although our InxGa1-xN alloys were on the metallic side of the metal-insulator transition, neither ...