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      Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures

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      Author
      Arslan, E.
      Bütün, S.
      Şafak, Y.
      Uslu, H.
      Tascioglu I.
      Altindal, S.
      Özbay, Ekmel
      Date
      2010
      Source Title
      Microelectronics Reliability
      Print ISSN
      0026-2714
      Publisher
      ELSEVIER
      Volume
      51
      Issue
      2
      Pages
      370 - 375
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      The forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiN x) on the main electrical parameters such as the ideality factor (n), zero-bias barrier height ( B0), series resistance (R s), interface-state density (N ss). The energy density distribution profiles of the N ss were obtained from the forward bias I-V characteristics by taking into account the voltage dependence of the effective barrier height ( e) and ideality factor (n V) of devices. In addition, the N ss as a function of E c-E ss was determined from the low-high frequency capacitance methods. It was found that the values of N ss and R s in SBD HEMTs decreases with increasing insulator layer thickness.
      Keywords
      AlGaN/AlN/GaN
      Barrier heights
      Electrical characterization
      Electrical parameter
      Energy density distributions
      Forward bias
      Heterostructures
      High electron mobility
      Ideality factors
      Insulator layer
      Interface state density
      IV characteristics
      Low-high
      MIS structure
      Reverse bias
      Room temperature
      Series resistances
      Voltage dependence
      Zero-bias
      Gallium
      Heterojunctions
      High electron mobility transistors
      Silicon nitride
      Schottky barrier diodes
      Permalink
      http://hdl.handle.net/11693/28416
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.microrel.2010.08.022
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Nanotechnology Research Center (NANOTAM) 1006
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