Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures
Author
Arslan, E.
Bütün, S.
Şafak, Y.
Uslu, H.
Tascioglu I.
Altindal, S.
Özbay, Ekmel
Date
2010Source Title
Microelectronics Reliability
Print ISSN
0026-2714
Publisher
ELSEVIER
Volume
51
Issue
2
Pages
370 - 375
Language
English
Type
ArticleItem Usage Stats
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Abstract
The forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiN x) on the main electrical parameters such as the ideality factor (n), zero-bias barrier height ( B0), series resistance (R s), interface-state density (N ss). The energy density distribution profiles of the N ss were obtained from the forward bias I-V characteristics by taking into account the voltage dependence of the effective barrier height ( e) and ideality factor (n V) of devices. In addition, the N ss as a function of E c-E ss was determined from the low-high frequency capacitance methods. It was found that the values of N ss and R s in SBD HEMTs decreases with increasing insulator layer thickness.
Keywords
AlGaN/AlN/GaNBarrier heights
Electrical characterization
Electrical parameter
Energy density distributions
Forward bias
Heterostructures
High electron mobility
Ideality factors
Insulator layer
Interface state density
IV characteristics
Low-high
MIS structure
Reverse bias
Room temperature
Series resistances
Voltage dependence
Zero-bias
Gallium
Heterojunctions
High electron mobility transistors
Silicon nitride
Schottky barrier diodes