Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage375en_US
dc.citation.issueNumber2en_US
dc.citation.spage370en_US
dc.citation.volumeNumber51en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorBütün, S.en_US
dc.contributor.authorŞafak, Y.en_US
dc.contributor.authorUslu, H.en_US
dc.contributor.authorTascioglu I.en_US
dc.contributor.authorAltindal, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T12:20:03Z
dc.date.available2016-02-08T12:20:03Z
dc.date.issued2010en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThe forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiN x) on the main electrical parameters such as the ideality factor (n), zero-bias barrier height ( B0), series resistance (R s), interface-state density (N ss). The energy density distribution profiles of the N ss were obtained from the forward bias I-V characteristics by taking into account the voltage dependence of the effective barrier height ( e) and ideality factor (n V) of devices. In addition, the N ss as a function of E c-E ss was determined from the low-high frequency capacitance methods. It was found that the values of N ss and R s in SBD HEMTs decreases with increasing insulator layer thickness.en_US
dc.identifier.doi10.1016/j.microrel.2010.08.022en_US
dc.identifier.issn0026-2714
dc.identifier.urihttp://hdl.handle.net/11693/28416
dc.language.isoEnglishen_US
dc.publisherELSEVIERen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.microrel.2010.08.022en_US
dc.source.titleMicroelectronics Reliabilityen_US
dc.subjectAlGaN/AlN/GaNen_US
dc.subjectBarrier heightsen_US
dc.subjectElectrical characterizationen_US
dc.subjectElectrical parameteren_US
dc.subjectEnergy density distributionsen_US
dc.subjectForward biasen_US
dc.subjectHeterostructuresen_US
dc.subjectHigh electron mobilityen_US
dc.subjectIdeality factorsen_US
dc.subjectInsulator layeren_US
dc.subjectInterface state densityen_US
dc.subjectIV characteristicsen_US
dc.subjectLow-highen_US
dc.subjectMIS structureen_US
dc.subjectReverse biasen_US
dc.subjectRoom temperatureen_US
dc.subjectSeries resistancesen_US
dc.subjectVoltage dependenceen_US
dc.subjectZero-biasen_US
dc.subjectGalliumen_US
dc.subjectHeterojunctionsen_US
dc.subjectHigh electron mobility transistorsen_US
dc.subjectSilicon nitrideen_US
dc.subjectSchottky barrier diodesen_US
dc.titleElectrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructuresen_US
dc.typeArticleen_US
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