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      Tunable visible response of ZnO thin-film phototransistors with atomic layer deposition technique

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      Author
      Aygün, Levent E.
      Bozkurt-Oruç, Feyza
      Okyay, Ali Kemal
      Date
      2012
      Source Title
      IEEE Photonics Conference 2012
      Publisher
      IEEE
      Pages
      384 - 385
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      Abstract
      We fabricated TFPT with 14-nm-thick n-ZnO channel at 80°C by ALD technique. The drain to source photocurrent due to UV photons can be tuned by changing gate voltage. We also observed that the absorption of sub-bandgap photons could be prevented by operating at positive gate bias. This property could be used for light modulators for visible regime. Moreover, this could be applied to the smart glass technology for electrical voltage controlled transparency. Furthermore, solar-blind UV detectors could also be designed with this technology. © 2012 IEEE.
      Keywords
      Atomic layer
      Gate voltages
      Positive gate bias
      Smart glass
      Solar-blind
      UV photons
      Voltage-controlled
      ZnO
      Light modulators
      Photonics
      Photons
      Zinc oxide
      Atomic layer deposition
      Permalink
      http://hdl.handle.net/11693/28089
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/IPCon.2012.6358653
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
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