Tunable visible response of ZnO thin-film phototransistors with atomic layer deposition technique

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage385en_US
dc.citation.spage384en_US
dc.contributor.authorAygün, Levent E.en_US
dc.contributor.authorBozkurt-Oruç, Feyzaen_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.coverage.spatialBurlingame, CA, USAen_US
dc.date.accessioned2016-02-08T12:10:46Z
dc.date.available2016-02-08T12:10:46Z
dc.date.issued2012en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.descriptionDate of Conference: 23-27 Sept. 2012en_US
dc.description.abstractWe fabricated TFPT with 14-nm-thick n-ZnO channel at 80°C by ALD technique. The drain to source photocurrent due to UV photons can be tuned by changing gate voltage. We also observed that the absorption of sub-bandgap photons could be prevented by operating at positive gate bias. This property could be used for light modulators for visible regime. Moreover, this could be applied to the smart glass technology for electrical voltage controlled transparency. Furthermore, solar-blind UV detectors could also be designed with this technology. © 2012 IEEE.en_US
dc.identifier.doi10.1109/IPCon.2012.6358653en_US
dc.identifier.urihttp://hdl.handle.net/11693/28089
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/IPCon.2012.6358653en_US
dc.source.titleIEEE Photonics Conference 2012en_US
dc.subjectAtomic layeren_US
dc.subjectGate voltagesen_US
dc.subjectPositive gate biasen_US
dc.subjectSmart glassen_US
dc.subjectSolar-blinden_US
dc.subjectUV photonsen_US
dc.subjectVoltage-controlleden_US
dc.subjectZnOen_US
dc.subjectLight modulatorsen_US
dc.subjectPhotonicsen_US
dc.subjectPhotonsen_US
dc.subjectZinc oxideen_US
dc.subjectAtomic layer depositionen_US
dc.titleTunable visible response of ZnO thin-film phototransistors with atomic layer deposition techniqueen_US
dc.typeConference Paperen_US
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