Elements of nanocrystal high-field carrier transport modeling
Author
Sevik, Cem
Bulutay, Ceyhun
Date
2007Source Title
Physica Status Solidi (C): Current Topics in Solid State Physics
Print ISSN
1862-6351
Publisher
Wiley
Volume
4
Issue
2
Pages
635 - 637
Language
English
Type
Conference PaperItem Usage Stats
149
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Abstract
Embedded semiconductor nanocrystals (NCs) within wide bandgap oxide materials are being considered for light emission and solar cell applications. One of the fundamental issues is the high-field transport in NCs. This requires the combination of a number of tools: ensemble Monte Carlo carrier transport simulation, ab initio band structure of the bulk oxide, Fermi's golden rule modeling of impact ionization and Auger processes and the pseudopotential-based atomistic description of the confined NC states. These elements are outlined in this brief report.
Keywords
Ab initio band structuresAuger processes
Fermi's golden rule
High-field transport
Pseudo potentials
Semiconductor nanocrystals
Solar-cell applications
Transport modelling
Transport simulations
Civil aviation
Direct energy conversion
Nanocrystalline alloys
Nanocrystals
Nanostructured materials
Nanostructures
Nanotechnology
Semiconductor materials
Solar energy
Impact ionization