Elements of nanocrystal high-field carrier transport modeling
Physica Status Solidi (C) Current Topics in Solid State Physics
MetadataShow full item record
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/27028
Embedded semiconductor nanocrystals (NCs) within wide bandgap oxide materials are being considered for light emission and solar cell applications. One of the fundamental issues is the high-field transport in NCs. This requires the combination of a number of tools: ensemble Monte Carlo carrier transport simulation, ab initio band structure of the bulk oxide, Fermi's golden rule modeling of impact ionization and Auger processes and the pseudopotential-based atomistic description of the confined NC states. These elements are outlined in this brief report. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
- Conference Paper 2294