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      Elements of nanocrystal high-field carrier transport modeling

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      Author
      Sevik, Cem
      Bulutay, Ceyhun
      Date
      2007
      Source Title
      Physica Status Solidi (C): Current Topics in Solid State Physics
      Print ISSN
      1862-6351
      Publisher
      Wiley
      Volume
      4
      Issue
      2
      Pages
      635 - 637
      Language
      English
      Type
      Conference Paper
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      Abstract
      Embedded semiconductor nanocrystals (NCs) within wide bandgap oxide materials are being considered for light emission and solar cell applications. One of the fundamental issues is the high-field transport in NCs. This requires the combination of a number of tools: ensemble Monte Carlo carrier transport simulation, ab initio band structure of the bulk oxide, Fermi's golden rule modeling of impact ionization and Auger processes and the pseudopotential-based atomistic description of the confined NC states. These elements are outlined in this brief report.
      Keywords
      Ab initio band structures
      Auger processes
      Fermi's golden rule
      High-field transport
      Pseudo potentials
      Semiconductor nanocrystals
      Solar-cell applications
      Transport modelling
      Transport simulations
      Civil aviation
      Direct energy conversion
      Nanocrystalline alloys
      Nanocrystals
      Nanostructured materials
      Nanostructures
      Nanotechnology
      Semiconductor materials
      Solar energy
      Impact ionization
      Permalink
      http://hdl.handle.net/11693/27028
      Published Version (Please cite this version)
      http://dx.doi.org/10.1002/pssc.200673327
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