Elements of nanocrystal high-field carrier transport modeling
dc.citation.epage | 637 | en_US |
dc.citation.issueNumber | 2 | en_US |
dc.citation.spage | 635 | en_US |
dc.citation.volumeNumber | 4 | en_US |
dc.contributor.author | Sevik, Cem | en_US |
dc.contributor.author | Bulutay, Ceyhun | en_US |
dc.coverage.spatial | İstanbul, Turkey | en_US |
dc.date.accessioned | 2016-02-08T11:42:19Z | en_US |
dc.date.available | 2016-02-08T11:42:19Z | en_US |
dc.date.issued | 2007 | en_US |
dc.department | Department of Physics | en_US |
dc.description | Date of Conference: 30 July-4 August 2006 | en_US |
dc.description | Conference Name: International Conference on Superlattices, Nano-Structures and Nano-Devices, ICSNN 2006 | en_US |
dc.description.abstract | Embedded semiconductor nanocrystals (NCs) within wide bandgap oxide materials are being considered for light emission and solar cell applications. One of the fundamental issues is the high-field transport in NCs. This requires the combination of a number of tools: ensemble Monte Carlo carrier transport simulation, ab initio band structure of the bulk oxide, Fermi's golden rule modeling of impact ionization and Auger processes and the pseudopotential-based atomistic description of the confined NC states. These elements are outlined in this brief report. | en_US |
dc.identifier.doi | 10.1002/pssc.200673327 | en_US |
dc.identifier.issn | 1862-6351 | en_US |
dc.identifier.uri | http://hdl.handle.net/11693/27028 | en_US |
dc.language.iso | English | en_US |
dc.publisher | Wiley | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1002/pssc.200673327 | en_US |
dc.source.title | Physica Status Solidi (C): Current Topics in Solid State Physics | en_US |
dc.subject | Ab initio band structures | en_US |
dc.subject | Auger processes | en_US |
dc.subject | Fermi's golden rule | en_US |
dc.subject | High-field transport | en_US |
dc.subject | Pseudo potentials | en_US |
dc.subject | Semiconductor nanocrystals | en_US |
dc.subject | Solar-cell applications | en_US |
dc.subject | Transport modelling | en_US |
dc.subject | Transport simulations | en_US |
dc.subject | Civil aviation | en_US |
dc.subject | Direct energy conversion | en_US |
dc.subject | Nanocrystalline alloys | en_US |
dc.subject | Nanocrystals | en_US |
dc.subject | Nanostructured materials | en_US |
dc.subject | Nanostructures | en_US |
dc.subject | Nanotechnology | en_US |
dc.subject | Semiconductor materials | en_US |
dc.subject | Solar energy | en_US |
dc.subject | Impact ionization | en_US |
dc.title | Elements of nanocrystal high-field carrier transport modeling | en_US |
dc.type | Conference Paper | en_US |
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