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dc.contributor.authorAksun, M.I.en_US
dc.contributor.authorMittra, R.en_US
dc.date.accessioned2016-02-08T10:55:27Z
dc.date.available2016-02-08T10:55:27Z
dc.date.issued1992en_US
dc.identifier.issn189480
dc.identifier.urihttp://hdl.handle.net/11693/26125
dc.description.abstractThe problem of spurious radiation from electronic packages is considered in this paper by investigating the power radiated from microstrip etches that are excited by arbitrarily-located current sources, and terminated by complex loads at both ends. The first step in the procedure is to compute the current distribution on the microstrip line by using the method of moments (MoM). Two novel contributions of this paper are: (i) employing the recently-derived closed-form Green’s functions in the spatial domain that permit an efficient computation of the elements of the MoM matrix; (ii) incorporating complex load terminations in a convenient manner with virtually no increase in the computation time. The computed current distribution is subsequently used to calculate the spurious radiated power and the result is compared with that derived by using an approximate, transmission line analysis. © 1992 IEEEen_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Transactions on Microwave Theory and Techniquesen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/22.168764en_US
dc.subjectBoundary value problemsen_US
dc.subjectElectric current distributionen_US
dc.subjectElectronics packagingen_US
dc.subjectFourier transformsen_US
dc.subjectLeakage currentsen_US
dc.subjectMatrix algebraen_US
dc.subjectTransmission line theoryen_US
dc.subjectClosed-form Green's functionsen_US
dc.subjectMethod of momentsen_US
dc.subjectMicrostrip etchesen_US
dc.subjectRadiation leakageen_US
dc.subjectSpurious radiationen_US
dc.subjectMicrostrip devicesen_US
dc.titleEstimation of Spurious Radiation from Microstrip Etches Using Closed-Form Green’s Functionsen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.spage2063en_US
dc.citation.epage2069en_US
dc.citation.volumeNumber40en_US
dc.citation.issueNumber11en_US
dc.identifier.doi10.1109/22.168764en_US
dc.publisherIEEEen_US


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