Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
Date
2014
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Source Title
Optical Engineering
Print ISSN
0091-3286
Electronic ISSN
Publisher
SPIE
Volume
53
Issue
10
Pages
Language
English
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Journal Title
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Abstract
Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices. © 2014 Society of Photo-Optical Instrumentation Engineers (SPIE).
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Keywords
Deposition , Optoelectronics , Photodetectors , Ultraviolet , Atomic layer deposition , Deposition , Gallium nitride , Metals , MOS devices , Optoelectronic devices , Photodetectors , Photons , Pulsed laser deposition , Temperature , Complementary metal oxide semiconductors , Flexible optoelectronics , Gallium nitrides (GaN) , Metal semiconductor metal , Optical characteristics , Photoresponsivity , Ultra-violet photodetectors , Ultraviolet , Semiconductor devices