Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

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buir.contributor.authorBıyıklı, Necmi
buir.contributor.authorOkyay, Ali Kemal
dc.citation.issueNumber10en_US
dc.citation.volumeNumber53en_US
dc.contributor.authorTekcan, B.en_US
dc.contributor.authorOzgit Akgun, C.en_US
dc.contributor.authorBolat, S.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2016-02-08T10:42:23Z
dc.date.available2016-02-08T10:42:23Z
dc.date.issued2014en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractProof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices. © 2014 Society of Photo-Optical Instrumentation Engineers (SPIE).en_US
dc.identifier.doi10.1117/1.OE.53.10.107106en_US
dc.identifier.issn0091-3286
dc.identifier.urihttp://hdl.handle.net/11693/25292
dc.language.isoEnglishen_US
dc.publisherSPIEen_US
dc.relation.isversionofhttps://doi.org/10.1117/1.OE.53.10.107106en_US
dc.source.titleOptical Engineeringen_US
dc.subjectDepositionen_US
dc.subjectOptoelectronicsen_US
dc.subjectPhotodetectorsen_US
dc.subjectUltravioleten_US
dc.subjectAtomic layer depositionen_US
dc.subjectDepositionen_US
dc.subjectGallium nitrideen_US
dc.subjectMetalsen_US
dc.subjectMOS devicesen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotonsen_US
dc.subjectPulsed laser depositionen_US
dc.subjectTemperatureen_US
dc.subjectComplementary metal oxide semiconductorsen_US
dc.subjectFlexible optoelectronicsen_US
dc.subjectGallium nitrides (GaN)en_US
dc.subjectMetal semiconductor metalen_US
dc.subjectOptical characteristicsen_US
dc.subjectPhotoresponsivityen_US
dc.subjectUltra-violet photodetectorsen_US
dc.subjectUltravioleten_US
dc.subjectSemiconductor devicesen_US
dc.titleMetal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperaturesen_US
dc.typeArticleen_US
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Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)