Anharmonicity in GaTe layered crystals
Date
2002Source Title
Crystal Research and Technology
Print ISSN
0232-1300
Publisher
Wiley-VCH Verlag GmbH & Co. KGaA
Volume
37
Issue
12
Pages
1303 - 1309
Language
English
Type
ArticleItem Usage Stats
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Abstract
The temperature dependencies (10-300 K) of seven Raman-active mode frequencies in layered semiconductor gallium telluride have been measured in the frequency range from 25 to 300 cm -1. Softening and broadening of the optical phonon lines are observed with increasing temperature. Comparison between the experimental data and theories of the shift of the phonon lines during heating of the crystal showed that the experimental dependencies can be explained by contributions from thermal expansion and lattice anharmonicity. Lattice anharmonicity is determined to be due to three-phonon processes.
Keywords
ChalcogenidesOptical properties
Raman spectroscopy
Semiconductors
Crystal lattices
Optical properties
Phonons
Raman spectroscopy
Semiconducting gallium compounds
Thermal expansion
X ray diffraction analysis
Optical phonons
Single crystals