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      Anharmonicity in GaTe layered crystals

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      Author(s)
      Aydınlı, Atilla
      Gasanly, N. M.
      Uka, A.
      Efeoglu, H.
      Date
      2002
      Source Title
      Crystal Research and Technology
      Print ISSN
      0232-1300
      Publisher
      Wiley-VCH Verlag GmbH & Co. KGaA
      Volume
      37
      Issue
      12
      Pages
      1303 - 1309
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      The temperature dependencies (10-300 K) of seven Raman-active mode frequencies in layered semiconductor gallium telluride have been measured in the frequency range from 25 to 300 cm -1. Softening and broadening of the optical phonon lines are observed with increasing temperature. Comparison between the experimental data and theories of the shift of the phonon lines during heating of the crystal showed that the experimental dependencies can be explained by contributions from thermal expansion and lattice anharmonicity. Lattice anharmonicity is determined to be due to three-phonon processes.
      Keywords
      Chalcogenides
      Optical properties
      Raman spectroscopy
      Semiconductors
      Crystal lattices
      Optical properties
      Phonons
      Raman spectroscopy
      Semiconducting gallium compounds
      Thermal expansion
      X ray diffraction analysis
      Optical phonons
      Single crystals
      Permalink
      http://hdl.handle.net/11693/24570
      Published Version (Please cite this version)
      http://dx.doi.org/10.1002/crat.200290006
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