Anharmonicity in GaTe layered crystals

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage1309en_US
dc.citation.issueNumber12en_US
dc.citation.spage1303en_US
dc.citation.volumeNumber37en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorUka, A.en_US
dc.contributor.authorEfeoglu, H.en_US
dc.date.accessioned2016-02-08T10:31:16Z
dc.date.available2016-02-08T10:31:16Z
dc.date.issued2002en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe temperature dependencies (10-300 K) of seven Raman-active mode frequencies in layered semiconductor gallium telluride have been measured in the frequency range from 25 to 300 cm -1. Softening and broadening of the optical phonon lines are observed with increasing temperature. Comparison between the experimental data and theories of the shift of the phonon lines during heating of the crystal showed that the experimental dependencies can be explained by contributions from thermal expansion and lattice anharmonicity. Lattice anharmonicity is determined to be due to three-phonon processes.en_US
dc.identifier.doi10.1002/crat.200290006en_US
dc.identifier.issn0232-1300
dc.identifier.urihttp://hdl.handle.net/11693/24570
dc.language.isoEnglishen_US
dc.publisherWiley-VCH Verlag GmbH & Co. KGaAen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/crat.200290006en_US
dc.source.titleCrystal Research and Technologyen_US
dc.subjectChalcogenidesen_US
dc.subjectOptical propertiesen_US
dc.subjectRaman spectroscopyen_US
dc.subjectSemiconductorsen_US
dc.subjectCrystal latticesen_US
dc.subjectOptical propertiesen_US
dc.subjectPhononsen_US
dc.subjectRaman spectroscopyen_US
dc.subjectSemiconducting gallium compoundsen_US
dc.subjectThermal expansionen_US
dc.subjectX ray diffraction analysisen_US
dc.subjectOptical phononsen_US
dc.subjectSingle crystalsen_US
dc.titleAnharmonicity in GaTe layered crystalsen_US
dc.typeArticleen_US
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