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      Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures

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      Author
      Lisesivdin, S. B.
      Balkan, N.
      Makarovsky, O.
      Patanè, A.
      Yildiz, A.
      Caliskan, M. D.
      Kasap, M.
      Ozcelik, S.
      Özbay, Ekmel
      Date
      2009
      Source Title
      Journal of Applied Physics
      Print ISSN
      0021-8979
      Electronic ISSN
      1089-7550
      Publisher
      AIP Publishing LLC
      Volume
      105
      Issue
      9
      Pages
      093701 (1-6)
      Language
      English
      Type
      Article
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      Abstract
      This work describes Shubnikov-de Haas (SdH) measurements in Al0.22 Ga0.78 N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a two-dimensional electron gas (2DEG) at the AlN/GaN interface. A beating pattern in the SdH oscillations is also observed and attributed to a zero-field spin splitting of the 2DEG first energy subband. The values of the effective spin-orbit coupling parameter and zero-field spin-split energy are estimated and compared with those reported in the literature. We show that zero-field spin-split energy tends to increase with increasing sheet electron density and that our value (12.75 meV) is the largest one reported in the literature for GaN-based heterostructures.
      Permalink
      http://hdl.handle.net/11693/22719
      Published Version (Please cite this version)
      https://doi.org/10.1063/1.3120782
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      • Nanotechnology Research Center (NANOTAM) 1006
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