Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
Author
Lisesivdin, S. B.
Balkan, N.
Makarovsky, O.
Patanè, A.
Yildiz, A.
Caliskan, M. D.
Kasap, M.
Ozcelik, S.
Özbay, Ekmel
Date
2009Source Title
Journal of Applied Physics
Print ISSN
0021-8979
Electronic ISSN
1089-7550
Publisher
AIP Publishing LLC
Volume
105
Issue
9
Pages
093701 (1-6)
Language
English
Type
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Abstract
This work describes Shubnikov-de Haas (SdH) measurements in Al0.22 Ga0.78 N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a two-dimensional electron gas (2DEG) at the AlN/GaN interface. A beating pattern in the SdH oscillations is also observed and attributed to a zero-field spin splitting of the 2DEG first energy subband. The values of the effective spin-orbit coupling parameter and zero-field spin-split energy are estimated and compared with those reported in the literature. We show that zero-field spin-split energy tends to increase with increasing sheet electron density and that our value (12.75 meV) is the largest one reported in the literature for GaN-based heterostructures.