Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage093701-1en_US
dc.citation.issueNumber9en_US
dc.citation.spage093701-6en_US
dc.citation.volumeNumber105en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorBalkan, N.en_US
dc.contributor.authorMakarovsky, O.en_US
dc.contributor.authorPatanè, A.en_US
dc.contributor.authorYildiz, A.en_US
dc.contributor.authorCaliskan, M. D.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:03:54Z
dc.date.available2016-02-08T10:03:54Z
dc.date.issued2009en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractThis work describes Shubnikov-de Haas (SdH) measurements in Al0.22 Ga0.78 N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a two-dimensional electron gas (2DEG) at the AlN/GaN interface. A beating pattern in the SdH oscillations is also observed and attributed to a zero-field spin splitting of the 2DEG first energy subband. The values of the effective spin-orbit coupling parameter and zero-field spin-split energy are estimated and compared with those reported in the literature. We show that zero-field spin-split energy tends to increase with increasing sheet electron density and that our value (12.75 meV) is the largest one reported in the literature for GaN-based heterostructures.en_US
dc.identifier.doi10.1063/1.3120782en_US
dc.identifier.eissn1089-7550
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/22719
dc.language.isoEnglishen_US
dc.publisherAIP Publishing LLCen_US
dc.relation.isversionofhttps://doi.org/10.1063/1.3120782en_US
dc.source.titleJournal of Applied Physicsen_US
dc.titleLarge zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructuresen_US
dc.typeArticleen_US
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Nanotechnology Research Center (NANOTAM)
Department of Electrical and Electronics Engineering
Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)