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      Transient surface photovoltage in n-and p-GaN as probed by x-ray photoelectron spectroscopy

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      Author
      Sezen, H.
      Özbay, Ekmel
      Aktas, O.
      Süzer, Şefik
      Date
      2011
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Electronic ISSN
      1077-3118
      Volume
      98
      Issue
      11
      Language
      English
      Type
      Article
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      141
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      Abstract
      Transient surface photovoltage (SPV) of n and p-GaN was measured using x-ray photoelectron spectroscopy (XPS) with a time resolution of 0.1 s. The measured SPV transients for both n- and p-GaN are 0.1 s, and for the n-GaN they are not affected by flood-gun electrons. However, for the p-GaN, the transient character of the SPV is dramatically changed in the presence of flood-gun electrons. The combination of time-resolved XPS, flood gun, and laser illumination give us a new way to study the surface electronic structure and other surface properties of semiconducting materials in a chemically specific fashion.
      Keywords
      Laser illumination
      Semiconducting materials
      Surface electronic structures
      Surface photovoltages
      Time resolution
      Time-resolved
      XPS
      Electronic structure
      Gallium nitride
      Photoelectricity
      Photons
      Surface properties
      Surface structure
      X ray photoelectron spectroscopy
      Permalink
      http://hdl.handle.net/11693/21989
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.3564892
      Collections
      • Department of Chemistry 594
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Nanotechnology Research Center (NANOTAM) 1006
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