Transient surface photovoltage in n-and p-GaN as probed by x-ray photoelectron spectroscopy

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorSüzer, Şefik
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.issueNumber11en_US
dc.citation.volumeNumber98en_US
dc.contributor.authorSezen, H.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorAktas, O.en_US
dc.contributor.authorSüzer, Şefiken_US
dc.date.accessioned2016-02-08T09:53:58Z
dc.date.available2016-02-08T09:53:58Z
dc.date.issued2011en_US
dc.departmentDepartment of Chemistryen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractTransient surface photovoltage (SPV) of n and p-GaN was measured using x-ray photoelectron spectroscopy (XPS) with a time resolution of 0.1 s. The measured SPV transients for both n- and p-GaN are 0.1 s, and for the n-GaN they are not affected by flood-gun electrons. However, for the p-GaN, the transient character of the SPV is dramatically changed in the presence of flood-gun electrons. The combination of time-resolved XPS, flood gun, and laser illumination give us a new way to study the surface electronic structure and other surface properties of semiconducting materials in a chemically specific fashion.en_US
dc.identifier.doi10.1063/1.3564892en_US
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/21989
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3564892en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectLaser illuminationen_US
dc.subjectSemiconducting materialsen_US
dc.subjectSurface electronic structuresen_US
dc.subjectSurface photovoltagesen_US
dc.subjectTime resolutionen_US
dc.subjectTime-resolveden_US
dc.subjectXPSen_US
dc.subjectElectronic structureen_US
dc.subjectGallium nitrideen_US
dc.subjectPhotoelectricityen_US
dc.subjectPhotonsen_US
dc.subjectSurface propertiesen_US
dc.subjectSurface structureen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.titleTransient surface photovoltage in n-and p-GaN as probed by x-ray photoelectron spectroscopyen_US
dc.typeArticleen_US
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Department of Chemistry
Department of Electrical and Electronics Engineering
Department of Physics
Nanotechnology Research Center (NANOTAM)