Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range
Date
2013Source Title
Journal of Applied Physics
Print ISSN
218979
Volume
113
Issue
8
Language
English
Type
ArticleItem Usage Stats
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Abstract
In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n detector. Kronig-Penney and envelope function approximation is used to calculate band gap energy and superlattice minibands. Variational method is also used to calculate exciton binding energies. Our results show that carriers overlap increases at GaSb/InAs interface on the higher energy side while it decreases at InAs/GaSb interface on the lower energy side with increasing reverse bias due to shifting the hole wavefunction toward to the GaSb/InAs interface decisively. Binding energies increase with increasing electric field due to overall overlap of electron and hole wave functions at the both interfaces in contrast with type I superlattices. This predicts that optical absorption is enhanced with increasing electric field. © 2013 American Institute of Physics.
Keywords
Band gap energyEnvelope function approximations
Exciton-binding energy
Hole wave functions
InAs/GaSb superlattices
Mid-wavelength infrared
Theoretical investigations
Variational methods
Binding energy
Electric fields
Indium antimonides
Superlattices