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      • Department of Electrical and Electronics Engineering
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      Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range

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      Author(s)
      Kaya, U.
      Hostut, M.
      Kilic, A.
      Sakiroglu, S.
      Sokmen I.
      Ergun, Y.
      Aydınlı, Atilla
      Date
      2013
      Source Title
      Journal of Applied Physics
      Print ISSN
      218979
      Volume
      113
      Issue
      8
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n detector. Kronig-Penney and envelope function approximation is used to calculate band gap energy and superlattice minibands. Variational method is also used to calculate exciton binding energies. Our results show that carriers overlap increases at GaSb/InAs interface on the higher energy side while it decreases at InAs/GaSb interface on the lower energy side with increasing reverse bias due to shifting the hole wavefunction toward to the GaSb/InAs interface decisively. Binding energies increase with increasing electric field due to overall overlap of electron and hole wave functions at the both interfaces in contrast with type I superlattices. This predicts that optical absorption is enhanced with increasing electric field. © 2013 American Institute of Physics.
      Keywords
      Band gap energy
      Envelope function approximations
      Exciton-binding energy
      Hole wave functions
      InAs/GaSb superlattices
      Mid-wavelength infrared
      Theoretical investigations
      Variational methods
      Binding energy
      Electric fields
      Indium antimonides
      Superlattices
      Permalink
      http://hdl.handle.net/11693/21063
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4793787
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      • Department of Electrical and Electronics Engineering 3702
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