Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range

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buir.contributor.authorAydınlı, Atilla
dc.citation.issueNumber8en_US
dc.citation.volumeNumber113en_US
dc.contributor.authorKaya, U.en_US
dc.contributor.authorHostut, M.en_US
dc.contributor.authorKilic, A.en_US
dc.contributor.authorSakiroglu, S.en_US
dc.contributor.authorSokmen I.en_US
dc.contributor.authorErgun, Y.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2016-02-08T09:40:28Z
dc.date.available2016-02-08T09:40:28Z
dc.date.issued2013en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractIn this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n detector. Kronig-Penney and envelope function approximation is used to calculate band gap energy and superlattice minibands. Variational method is also used to calculate exciton binding energies. Our results show that carriers overlap increases at GaSb/InAs interface on the higher energy side while it decreases at InAs/GaSb interface on the lower energy side with increasing reverse bias due to shifting the hole wavefunction toward to the GaSb/InAs interface decisively. Binding energies increase with increasing electric field due to overall overlap of electron and hole wave functions at the both interfaces in contrast with type I superlattices. This predicts that optical absorption is enhanced with increasing electric field. © 2013 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.4793787en_US
dc.identifier.issn218979
dc.identifier.urihttp://hdl.handle.net/11693/21063
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4793787en_US
dc.source.titleJournal of Applied Physicsen_US
dc.subjectBand gap energyen_US
dc.subjectEnvelope function approximationsen_US
dc.subjectExciton-binding energyen_US
dc.subjectHole wave functionsen_US
dc.subjectInAs/GaSb superlatticesen_US
dc.subjectMid-wavelength infrareden_US
dc.subjectTheoretical investigationsen_US
dc.subjectVariational methodsen_US
dc.subjectBinding energyen_US
dc.subjectElectric fieldsen_US
dc.subjectIndium antimonidesen_US
dc.subjectSuperlatticesen_US
dc.titleTheoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared rangeen_US
dc.typeArticleen_US
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