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      Effect of film thickness on the electrical properties of AlN films prepared by plasma-enhanced atomic layer deposition

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      Author
      Altuntas, H.
      Ozgit Akgun, C.
      Donmez, I.
      Bıyıklı, Necmi
      Date
      2015
      Source Title
      IEEE Transactions on Electron Devices
      Print ISSN
      0018-9383
      Publisher
      Institute of Electrical and Electronics Engineers Inc.
      Volume
      62
      Issue
      11
      Pages
      3627 - 3632
      Language
      English
      Type
      Article
      Item Usage Stats
      157
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      132
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      Abstract
      In this paper, AlN thin films with two different thicknesses, i.e., 7 and 47 nm, were deposited at 200 °C on p-type Si substrates by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia. To investigate the electrical characteristics of these AlN films, MIS capacitor structures were fabricated and characterized using current-voltage and high-frequency (1 MHz) capacitance-voltage measurements. The results showed that the current transport mechanism under accumulation mode is strongly dependent on the applied electric field and thickness of the AlN film. Possible conduction mechanisms were analyzed, and the basic electrical parameters were extracted and compared for AlN thin films with different thicknesses. Compared with 7-nm-thick film, a 47-nm-thick AlN film showed a lower effective charge density and threshold voltage along with a higher dielectric constant.
      Keywords
      Aluminum nitride (AlN)
      Current transport
      Fowler-Nordheim (FN) tunneling
      Frenkel-Poole (FP) emission
      Plasma-enhanced atomic layer deposition (PEALD)
      Trap-assisted tunneling (TAT).
      Atomic layer deposition
      Capacitance
      Deposition
      Electric fields
      Threshold voltage
      Accumulation modes
      Capacitance voltage measurements
      Conduction Mechanism
      Current transport mechanism
      Electrical characteristic
      Electrical parameter
      High frequency HF
      Plasma-enhanced atomic layer deposition
      Thin films
      Permalink
      http://hdl.handle.net/11693/20937
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/TED.2015.2476597
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      • Institute of Materials Science and Nanotechnology (UNAM) 1831
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