Effect of film thickness on the electrical properties of AlN films prepared by plasma-enhanced atomic layer deposition

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buir.contributor.authorBıyıklı, Necmi
dc.citation.epage3632en_US
dc.citation.issueNumber11en_US
dc.citation.spage3627en_US
dc.citation.volumeNumber62en_US
dc.contributor.authorAltuntas, H.en_US
dc.contributor.authorOzgit Akgun, C.en_US
dc.contributor.authorDonmez, I.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.date.accessioned2016-02-08T09:38:17Z
dc.date.available2016-02-08T09:38:17Z
dc.date.issued2015en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractIn this paper, AlN thin films with two different thicknesses, i.e., 7 and 47 nm, were deposited at 200 °C on p-type Si substrates by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia. To investigate the electrical characteristics of these AlN films, MIS capacitor structures were fabricated and characterized using current-voltage and high-frequency (1 MHz) capacitance-voltage measurements. The results showed that the current transport mechanism under accumulation mode is strongly dependent on the applied electric field and thickness of the AlN film. Possible conduction mechanisms were analyzed, and the basic electrical parameters were extracted and compared for AlN thin films with different thicknesses. Compared with 7-nm-thick film, a 47-nm-thick AlN film showed a lower effective charge density and threshold voltage along with a higher dielectric constant.en_US
dc.identifier.doi10.1109/TED.2015.2476597en_US
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/11693/20937en_US
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/TED.2015.2476597en_US
dc.source.titleIEEE Transactions on Electron Devicesen_US
dc.subjectAluminum nitride (AlN)en_US
dc.subjectCurrent transporten_US
dc.subjectFowler-Nordheim (FN) tunnelingen_US
dc.subjectFrenkel-Poole (FP) emissionen_US
dc.subjectPlasma-enhanced atomic layer deposition (PEALD)en_US
dc.subjectTrap-assisted tunneling (TAT).en_US
dc.subjectAtomic layer depositionen_US
dc.subjectCapacitanceen_US
dc.subjectDepositionen_US
dc.subjectElectric fieldsen_US
dc.subjectThreshold voltageen_US
dc.subjectAccumulation modesen_US
dc.subjectCapacitance voltage measurementsen_US
dc.subjectConduction Mechanismen_US
dc.subjectCurrent transport mechanismen_US
dc.subjectElectrical characteristicen_US
dc.subjectElectrical parameteren_US
dc.subjectHigh frequency HFen_US
dc.subjectPlasma-enhanced atomic layer depositionen_US
dc.subjectThin filmsen_US
dc.titleEffect of film thickness on the electrical properties of AlN films prepared by plasma-enhanced atomic layer depositionen_US
dc.typeArticleen_US
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