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      Donor-acceptor pair recombination in AgIn5S8 single crystals

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      Author(s)
      Gasanly, N. M.
      Serpengüzel, A.
      Aydınlı, Atilla
      Gürlü, O.
      Yilmaz, I.
      Date
      1999-03-15
      Source Title
      Journal of Applied Physics
      Print ISSN
      0021-8979
      Publisher
      American Institute of Physics
      Volume
      85
      Issue
      6
      Pages
      3198 - 3201
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Photoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV at 10 K and an excitation intensity of 0.97 W cm(-2). The redshift of this band with increasing temperature and with decreasing excitation intensity was observed. To explain the observed PL behavior, we propose that the emission is due to radiative recombination of a donor-acceptor pair, with an electron occupying a donor level located at 0.06 eV below the conduction band, and a hole occupying an acceptor level located at 0.32 eV above the valence band. (C) 1999 American Institute of Physics.
      Keywords
      Photoluminescence
      Dependence
      Band
      Permalink
      http://hdl.handle.net/11693/13586
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.369660
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      • Department of Physics 2397
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