Donor-acceptor pair recombination in AgIn5S8 single crystals

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage3201en_US
dc.citation.issueNumber6en_US
dc.citation.spage3198en_US
dc.citation.volumeNumber85en_US
dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorSerpengüzel, A.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorGürlü, O.en_US
dc.contributor.authorYilmaz, I.en_US
dc.date.accessioned2015-07-28T12:07:05Z
dc.date.available2015-07-28T12:07:05Z
dc.date.issued1999-03-15en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractPhotoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV at 10 K and an excitation intensity of 0.97 W cm(-2). The redshift of this band with increasing temperature and with decreasing excitation intensity was observed. To explain the observed PL behavior, we propose that the emission is due to radiative recombination of a donor-acceptor pair, with an electron occupying a donor level located at 0.06 eV below the conduction band, and a hole occupying an acceptor level located at 0.32 eV above the valence band. (C) 1999 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.369660en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/13586
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.369660en_US
dc.source.titleJournal of Applied Physicsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectDependenceen_US
dc.subjectBanden_US
dc.titleDonor-acceptor pair recombination in AgIn5S8 single crystalsen_US
dc.typeArticleen_US
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