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      Influence of substrate temperature and bias voltage on the optical transmittance of TIN Films

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      Author(s)
      Durusoy, H. Z.
      Duyar, O.
      Aydınlı, Atilla
      Ay, F.
      Date
      2003
      Source Title
      Vacuum
      Print ISSN
      0042-207X
      Publisher
      Elsevier Science
      Volume
      70
      Issue
      1
      Pages
      21 - 28
      Language
      English
      Type
      Article
      Item Usage Stats
      133
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      153
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      Abstract
      Titanium nitride (TiN) thin films were prepared by means of reactive DC sputtering on quartz and sapphire substrates. Structural, electrical and optical effects of deposition parameters such as thickness, substrate temperature, substrate bias voltage were studied. The effect of substrate temperature variations in the 100-300degreesC range and substrate bias voltage variations in the 0-200 V DC range for 45-180 nm thick TiN films were investigated. Temperature-ependent electrical resistivity in the 100-350K range and optical transmission in the 300-1500 nm range were measured for the samples. In addition, structural and morphological properties were studied by means of XRD and STM techniques. The smoothest surface and the lowest electrical resistivity was recorded for the optimal samples that were biased at about V-s= -120V DC. Unbiased films exhibited a narrow optical transmission window between 300 and 600 nm. However, the transmission became much greater with increasing bias voltage for the same substrate temperature. Furthermore, it was found that lower substrate temperatures produced optically more transparent films. Application of single layers of MgF2 antireflecting coating on optimally prepared TiN films helped increase the optical transmission in the visible region to more than 40% for 45 nm thick samples.
      Keywords
      Titanium nitride
      Optical transmittance
      Electrical resistance
      Ar coating
      Permalink
      http://hdl.handle.net/11693/11215
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/S0042-207X(02)00663-2
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      • Department of Physics 2397
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