Statistics for The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure
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The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure | 2 |
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10.1016-j.tsf.2013.11.114.pdf | 14 |