High-speed transparent indium-tin-oxide based resonant cavity Schottky photodiode with Si/sub 3/N/sub 4//SiO/sub 2/ top Bragg mirror

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage469en_US
dc.citation.spage468en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorAytur, O.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorGokkavas, M.en_US
dc.contributor.authorUnlu, S.en_US
dc.date.accessioned2016-02-08T10:36:57Z
dc.date.available2016-02-08T10:36:57Z
dc.date.issued2000en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractPhotodetectors demonstrating high bandwidth-efficiency (BWE) products are required for high-performance optical communication and measurement systems. For conventional photodiodes the BWE product is limited due to the bandwidth-efficiency trade-off. A resonant cavity enhanced (RCE) photodetection scheme offers the possibility to overcome this limitation. Very high BWE products are achieved using Schottky and p-i-n type RCE photodiodes, which could not be reached with conventional detector structures. Even better performances should be possible for RCE Schottky photodiodes if one can get rid of the optical losses and scattering caused by the Schottky metal, Au, which also serves as the top mirror of the resonant cavity. The transparent, low resistivity material indium-tin-oxide (ITO) is a potential alternative to thin semi-transparent Au as a Schottky-barrier contact material. We report our work on high-performance ITO-based RCE Schottky photodiodes.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:36:57Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2000en
dc.identifier.doi10.1109/CLEO.2000.907263en_US
dc.identifier.isbn1-55752-634-6
dc.identifier.urihttp://hdl.handle.net/11693/24968
dc.language.isoEnglishen_US
dc.publisherIEEE, Piscataway, NJ, United Statesen_US
dc.relation.isversionofhttp://doi.org/10.1109/CLEO.2000.907263en_US
dc.source.titlePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digesten_US
dc.subjectEllipsometryen_US
dc.subjectLaser pulsesen_US
dc.subjectMagnetron sputteringen_US
dc.subjectMirrorsen_US
dc.subjectOptical variables measurementen_US
dc.subjectPhotodetectorsen_US
dc.subjectProbesen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconducting indium compoundsen_US
dc.subjectSilicon compoundsen_US
dc.subjectSolid state lasersen_US
dc.subjectBragg mirroren_US
dc.subjectIndium tin oxideen_US
dc.subjectInterconnect metallizationen_US
dc.subjectMultimode fiberen_US
dc.subjectOptical lossesen_US
dc.subjectPhotoresponse measurementen_US
dc.subjectResonant cavity Schottky photodiodesen_US
dc.subjectPhotodiodesen_US
dc.titleHigh-speed transparent indium-tin-oxide based resonant cavity Schottky photodiode with Si/sub 3/N/sub 4//SiO/sub 2/ top Bragg mirroren_US
dc.typeArticleen_US

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